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Method for manufacturing light emitting device

A technology of light-emitting devices and epitaxial layers, which is applied in the field of making light-emitting devices and can solve the problems of chip heating, affecting performance and reliability, etc.

Inactive Publication Date: 2008-12-31
TINGGI TECH PTE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the chip will heat up, affecting performance and reliability

Method used

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  • Method for manufacturing light emitting device
  • Method for manufacturing light emitting device
  • Method for manufacturing light emitting device

Examples

Experimental program
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Effect test

Embodiment Construction

[0067] For the following descriptions, reference numerals in parentheses indicate Figure 8 process steps in.

[0068] refer to figure 1 , shows the first step in the process - the metallization on the p-type surface of the wafer 10 .

[0069] Wafer 10 is an epitaxial wafer having a substrate and a stack of multiple epitaxial layers 14 thereon. The substrate 12 may be, for example, sapphire, GaAs, InP, Si, or the like. Hereinafter, a GaN sample having GaN layer 14 on sapphire substrate 12 will be used as an example. The epitaxial layer 14 (often referred to as the epitaxial layer) is a stack of layers, with the lower portion 16 (grown first on the substrate) typically being an n-type layer and the upper portion 18 being typically a p-type layer.

[0070] On the GaN layer 14 is an ohmic contact layer 20 having multiple metal layers. A bonding layer 22 is added to the ohmic contact layer 20, and a thin copper seed layer 24 of a thermally conductive metal such as copper ( ...

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PUM

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Abstract

The invention relates to a preparation method of a light-emitting device. The method includes the following steps: (a) a wafer (10) comprising a substrate (12) is provided, a plurality of epitaxial layers (14) are arranged on the substrate (12), and the epitaxial layers (14) comprise an active region which can emit light; (b) at least one layer of a first contact is formed on a first surface of the epitaxial layers (14), the first surface is far away from the substrate (12), and at least one layer of the first contact is and is to be a reflective material of a reflective layer; (c) a relatively thick layer (28) of thermal conductive metal is generated beside at least one layer of the first contact, the relatively thick layer (28) is formed without picture composition, and the picture composition is carried out subsequently; and (d) the substrate (12) is removed.

Description

[0001] This application is a divisional application of a patent application with an application date of September 19, 2003, an application number of 03827175.3, and an invention title of "Manufacturing of Semiconductor Devices". technical field [0002] The present invention relates to methods for fabricating light emitting devices, and in particular, though not exclusively, to plating heat sinks on semiconductor devices. Background technique [0003] With the development of semiconductor devices, there has been a remarkable increase in their operating speed and reduction in overall size. This leads to a major problem of heat accumulation in semiconductor devices. Accordingly, heat sinks are used to help dissipate heat from semiconductor devices. Such heat sinks are usually manufactured separately from the semiconductor device and are usually bonded to the semiconductor device just prior to packaging. [0004] There are many proposals for electroplating copper onto the sur...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01S5/024H01L21/027H01L21/285H01L21/4763H01L23/36H01L23/367H01L23/373H01L31/024H01L31/052H01L31/18H01L33/32H01L33/36H01L33/44H01S5/02H01S5/042H01S5/323
CPCH01L21/28575H01L33/0093H01L2924/0002H01S5/0201H01S5/0213H01S5/0217H01S5/02461H01S5/0421H01S5/32341H01L2924/00
Inventor 康学军吴大可爱德华·R·佩里袁述
Owner TINGGI TECH PTE