Method for forming semiconductor device with self-alignment silicide layer

Abstract

A method for forming a semiconductor device and selectively forming a salicide layer is described. In one embodiment, the method includes depositing a metal layer over a semiconductor substrate having a first area (20) and a second area (24), wherein the first area and the second area include silicon, removing the metal layer over the second gate electrode, and reacting the metal layer with the first area to form a salicide layer (48) over the first area. In one embodiment, the first area and the second area include a first gate electrode and a second gate electrode, respectively.

Description

technical field [0001] The present invention relates generally to forming semiconductor devices, and more particularly to forming salicide layers. Background technique [0002] In semiconductor fabrication, semiconductor devices are typically formed with a lightly doped drain at the junction with a channel and a higher doped drain region for making contacts. The source electrode is also made in the same way. The contact to the drain is achieved using silicide, which is a silicon metal compound. This material is also known as salicide, which refers to a specific synthesis commonly referred to as 'salicide'. The salicide is the contact point for the source and drain of the semiconductor device. [0003] A method for forming a salicide includes: depositing a metal layer on a semiconductor wafer; reacting the metal layer with silicon-containing regions to form a metal suicide; part of the response. This method forms a salicide on all areas including silicon. However, it is...

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Problems solved by technology

However, it is difficult to remove oxide and nitride layers

Furthermore, the nitride layer is often not completely removed during processing and causes defectivity issues

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