Apparatus and method for cleaning of objects, in particular of thin discs

A technology for thin wafers and spray devices, applied in the field of pre-cleaning devices, can solve the problems such as the inability to obtain standardized and repeatable surface characteristics, the inability to guarantee constant quality, and the influence of processing procedures.

Inactive Publication Date: 2009-02-04
RENA SONDERMASCHINEN GMBH
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also, the waste slurry is still sticking there, so that the following treatment process is seriously affected
[0014] A general disadvantage of this manual process is that it does not guarantee a constant quality to obtain standardized and reproducible results regarding the surface properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for cleaning of objects, in particular of thin discs
  • Apparatus and method for cleaning of objects, in particular of thin discs
  • Apparatus and method for cleaning of objects, in particular of thin discs

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] exist figure 1 Indicates the substrate billet to be cleaned. A substrate blank 1 is mounted on a carrier device 2 consisting of a glass pane 3 and a mounting element 4 . In this embodiment, one side 5 of the substrate ingot 1 is glued flat to the glass plate 3 . The sawing process that has been performed cuts into the glass pane 3 , resulting in individual substrates, also referred to as wafers 6 . Between the individual wafers 6 are formed gaps 7 in which so-called waste slurry (not shown in the figure) is present, which is to be removed according to the cleaning method of the present invention.

[0051] In order to transfer the substrate ingot connected to the carrier device 2 to the Figure 4 and the device described in 5, so that the carrier device 2 and the figure 2 and 3 Transport with the aids described in . Preferably, the auxiliary device 8 comprises a laterally arranged mechanism 9 which is compatible with the Figure 4 Cooperate with the device of 5. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a device for cleaning thin wafers (6), said wafers (6) being immobilized with one side on a support device (2) and an interspace (7) being defined between two respective adjoining substrates. The device essentially consists of a shower device (15) which is used to introduce a fluid between the interspaces (7), and a tank (14) that can be filled with the fluid and is dimensioned to receive the support device (2). The invention is characterized in that optionally either the shower device (15) can be displaced relative to the stationary support device (2), or the support device (2) relative to the stationary shower device (15), or both the support device (2) and the shower device (15) can be displaced relative each other. The method according to the invention is characterized by showering, preferably in a cleaning step, the wafers with warm fluid, the support device (2) being displaced inside the tank, then ultrasound-cleaning them in cold fluid and again showering them with warm fluid.

Description

technical field [0001] The present invention generally relates to cleaning thin wafers, such as semiconductor wafers, glass substrates, photomasks, mini-disks or similar objects. In particular, the present invention relates to apparatus and methods for pre-cleaning semiconductor wafers after they have been sawed from an ingot. [0002] definition [0003] According to the present invention the term "thin disc" must be understood as referring to objects having a very small thickness in the range between 80 and 300 micrometers, eg 150-170 μm (micrometers). The shape of the wafer is arbitrary, and may be, for example, generally round (semiconductor wafers) or generally rectangular or square (solar wafers), where the corners may optionally be angled, rounded, or side-cornered. Due to their small thickness, these objects are extremely fragile. The present invention relates to the pre-cleaning of these objects. [0004] In the following, the device and the method according to th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00
CPCB08B3/10B08B3/02H01L21/67326B08B11/02H01L21/67023H01L21/67051H01L21/67057H01L21/67313H01L21/302
Inventor N·伯格
Owner RENA SONDERMASCHINEN GMBH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products