Method for measuring photoresist mask slot-shaped structure parameter

A technique for measuring structural parameters and measuring light, which is applied in the direction of measuring devices, optical devices, instruments, etc., and can solve the problems of inapplicability of large-area samples

Inactive Publication Date: 2009-03-04
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing commercial AFM and AFP are

Method used

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  • Method for measuring photoresist mask slot-shaped structure parameter
  • Method for measuring photoresist mask slot-shaped structure parameter
  • Method for measuring photoresist mask slot-shaped structure parameter

Examples

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Embodiment 1

[0054] Embodiment one: see attached figure 1 to attach Figure 4 As shown, a method for measuring the groove structure parameters of a photoresist mask, the specific process of measurement is as follows:

[0055] (1) According to image 3 The measurement optical path is established as shown, and the polarizer is adjusted so that the incident polychromatic parallel light incident on the mask under test is TE / TM linearly polarized light;

[0056] (2) Adjust the angle of the sample holder so that the incident angle is the Littrow angle (that is, θ angle) of the measured grating, and fix the sample holder;

[0057] (3) First place the standard reflector on the sample holder, use the lens to focus the reflected light of the standard reflector to the incident slit of the spectrometer, and use the spectrometer to measure the spectrum D of the reflected light of the standard reflector 0 (λ);

[0058] (4) After completing the measurement of the reflection spectrum of the standard r...

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PUM

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Abstract

The invention discloses a method for measuring photoresist mask groove shape structure parameter, which is characterized in that TE/TM linearly polarized light which is used as incident light and the blaze angle of the measured mask which is used as incident angle are utilized to measure the spectral distribution D0 (Lambada) of the reflected light of a standard reflected slice and the spectral distribution D (Lambada) of the reflected and diffracted zero level polychromatic light of the measured mask. A comparison method is utilized to calculate actual reflected and diffracted zero level spectral distribution Rg (Lambada) of a dielectric layer raster mask. The actual reflected and diffracted zero level spectral distribution Rg (Lambada) is processed by spectrum inversion to get the groove parameter of the mask, such as the residual thickness of the photoresist, groove depth and duty cycle and so on. The method realizes the undamaged detection to the groove parameter of large area and great weight of masks, can avoid the error of the measuring system, has no special requirement to spectrograph measuring system and light source, and has simple and easy measuring method.

Description

technical field [0001] The invention relates to a non-destructive measurement method of a micro size, in particular to a method for measuring the groove structure parameters of a photoresist mask. Background technique [0002] The ion-etched dielectric film grating used for laser pulse compression (hereinafter referred to as the pulse compression grating) is a key component for obtaining ultrashort and ultrahigh-intensity lasers, and the multilayer dielectric film substrate photoresist grating is used as a mask for making the pulse compression grating. Its quality is directly related to the quality of the pulse compression grating. The quality inspection of the photoresist grating mask on the multilayer dielectric film substrate (hereinafter referred to as the dielectric film grating mask) is an important quality control link in the process of pulse compression grating engineering manufacturing. [0003] The dielectric film grating mask is a grating made of photoresist mate...

Claims

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Application Information

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IPC IPC(8): G01B11/25G01B11/06G01B11/22G01B11/02
Inventor 陈新荣吴建宏李朝明
Owner SUZHOU UNIV
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