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Lithographic projection apparatus

A projection device and lithography technology, applied in photolithography exposure device, microlithography exposure equipment, optics, etc., can solve the problems of affecting image quality, rising, polluting liquid temperature, etc.

Inactive Publication Date: 2009-03-11
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Further problems created by immersion lithography include the difficulty of keeping the depth of the liquid constant and the difficulty of moving the substrate to and from the imaging position under the end projection system elements
Also, contamination of the liquid (caused by chemicals dissolving therein) and an increase in the temperature of the liquid adversely affect the achievable imaging quality

Method used

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  • Lithographic projection apparatus
  • Lithographic projection apparatus
  • Lithographic projection apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0074] figure 1 A lithographic projection apparatus according to a specific embodiment of the present invention is schematically shown. The unit includes:

[0075] a radiation system Ex, IL for providing a radiation projection beam PB (eg DUV radiation), which in this particular example also includes a radiation source LA;

[0076] A first target table (mask table) MT provided with a mask holder for holding a mask MA (e.g. a reticle) and connected to first positioning means for precisely positioning the mask relative to the object PL ;

[0077] A second target table (substrate table) WT provided with a substrate holder for holding a substrate W (e.g. a resist-coated silicon wafer) and connected to a second positioning device for precise positioning of the substrate relative to the object PL ;

[0078] A projection system ("lens") PL (eg a refractive lens system) is used to image the radiation portion of the mask MA onto a target portion C of the substrate W (eg comprising o...

Embodiment approach 2

[0098] The second embodiment is shown in Figure 4 and Figure 5 Among them, it is the same as the first embodiment except as described below.

[0099] In this embodiment, a second gas outlet 216 is provided on the other side of the gas inlet 15 with respect to the first gas outlet 14 . In this way, any gas escaping from the gas inlet 15 outwardly away from the optical axis of the device is absorbed by the second gas outlet 216 connected to the vacuum source. This prevents gas from escaping the hermetic seal, so it does not interfere with, for example, interferometer readings or the vacuum in which the projection system and / or substrate resides.

[0100] Another advantage of the embodiment using two gas outlets is that this design is very similar to the design of air bearings previously used in lithographic projection setups. The experience gained in those air bearings can therefore be directly applied to the air seal of this embodiment. The hermetic seal of the second emb...

Embodiment approach 3

[0110] like Figure 6 As shown, as an alternative or a further development of the second embodiment, a channel 320 can be provided on the surface of the sealing member 12 facing the substrate W, inside the first gas outlet 14 (that is, closer to the optical axis of the projection system). . The channel 320 may have the same structure as the gas inlet and outlet 14 , 15 , 216 .

[0111] Using the channel 320, the pressure P2 can be varied independently of the pressure P3. Alternatively, by opening the passage to ambient pressure above the liquid level in the reservoir 10, the liquid consumption of the reservoir during operation is greatly reduced. This embodiment has been described in connection with the second embodiment, however the channel 320 may be used in connection with any of the other embodiments, in particular the first embodiment. Another advantage is that the gas inlet 15 and gas outlet 14 (and for some embodiments the second gas outlet 216 ) are not disturbed. ...

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PUM

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Abstract

The lithography projection apparatus comprises: a radiation system providing a radiation projection beam; a support structure supporting a patterning means patterning the projection beam according to a pattern; a substrate table holding the substrate; a projection system projecting the patterned beam onto a target part of the substrate; and a liquid supply system filling at least part of space between a last element of the projection system and an object on the substrate table with liquid. The liquid supply system also includes a suppression device for suppressing fluctuation on the top surface of liquid in the liquid supply system, and a pressure release device.

Description

[0001] The present invention is a divisional application filed by the applicant on November 11, 2003, with the application number 200310120957.1 and the title of the invention "lithography device and device manufacturing method". technical field [0002] The invention relates to a lithographic projection apparatus comprising: a radiation system for providing a radiation projection beam; a support structure for supporting a patterning member for patterning the projection beam according to a desired pattern; for holding a substrate table for a substrate; a projection system for projecting a patterned beam onto a target portion of a substrate; and a liquid supply system for at least partially filling a gap between an end element of the projection system and the substrate with liquid . Background technique [0003] The term "patterning means" as used herein should be broadly interpreted as a means capable of imparting a patterned cross-section to an incident radiation beam, wher...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F9/00
CPCG03F7/70341G03F7/7085G03F9/7088G03F7/707
Inventor J·洛夫A·T·A·M·德克森C·A·胡根达姆A·科勒斯伊辰科E·R·鲁普斯特拉T·M·默德曼J·C·H·穆肯斯R·A·S·里特塞马K·西蒙J·T·德斯米特A·斯特拉艾杰B·斯特里夫克H·范桑坦
Owner ASML NETHERLANDS BV