Method for prolonging life of multi-layered unit flash memory

Abstract

The invention relates to a method of prolonging the service life of a multi-layer unit flash memory. The method comprises the steps as follows: 1) providing the multi-layer unit flash memory which includes a memory chunk; 2) reading data stored in the memory chunk; 3) using an error-correcting code (ECC) unit to correct errors of the data ; 4) erasing the data stored in the memory chunk when the data error-number exceeds the default; and 5) rewriting the data onto the memory chunk. The method can prevent the service life of the multi-layer unit flash memory from reduction due to the errors of the data stored in the multi-layer unit flash memory. .

Description

technical field [0001] The invention relates to a method for prolonging the service life of a flash memory, in particular to a method for prolonging the service life of a multi-layer unit flash memory. Background technique [0002] Flash memory (Flash Memory) is a kind of non-volatile memory. It can maintain the content stored in the memory even when no power is applied. When the flash memory is installed in an electronic device, the stored content can still be changed, so it is more Read memory (ROM) is more suitable for various portable electronic products. [0003] With the ever-increasing demand for storage capacity of electronic products such as mobile phones, music players (MP3 Players), and portable memory cards, manufacturers of flash memory are also actively increasing the density of memory in a single chip, but due to The difficulty of miniaturization of the manufacturing process is getting higher and higher, making it more and more difficult to increase the capac...

AI Technical Summary

Problems solved by technology

[0004] However, after a part of the multi-level cell (MLC) is repeatedly read, data errors may occur. As the number of reads increases, the number of errors will increase. When any page (Page) in the block (Block) When the number of errors exceeds the maximum error correctable error correction code (ECC), the data of this page (Page) will be destroyed, seriously affecting the service life of the multi-layer cell (MLC), thus causing the multi-layer cell (MLC) The read and write life is only one-tenth or even one-twentieth of that of a single-level cell (SLC)

[0005] Therefore, how to provide a flash memory erasing process to avoid the excessive number of page errors and reduce the service life of the flash memory, so that the read and write life of the multi-level cell (MLC) can be close to that of the single-level cell (SLC), It is an urgent problem to be solved

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