Solution method of contact hole thick nitridation titanium film crack

A solution, the technology of titanium nitride, is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as cracks, side erosion, and affecting the quality of transistors.

Inactive Publication Date: 2009-05-27
HEJIAN TECH SUZHOU
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Problems solved by technology

However, after rapid heat treatment, TiN tends to produce cracks at the position of the fixed layer or around the contour of the film.
This defect will lead to serious side erosion, for example, Ti is easy to react with WF6 at the crack of TiN, which will eventually affect the quality of the transistor

Method used

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  • Solution method of contact hole thick nitridation titanium film crack
  • Solution method of contact hole thick nitridation titanium film crack
  • Solution method of contact hole thick nitridation titanium film crack

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Embodiment Construction

[0023] In order to enhance the adhesion between the deposited tungsten layer and the underlying metal layer, a layer of glue layer (Glue Layer) composed of titanium nitride (TiN) is usually formed before deposition. On the one hand, the function of the adhesive layer is to allow the deposited metal film to adhere to the substrate, and on the other hand, it will not affect the conduction of the deposited metal film.

[0024] The underside of the blanket tungsten deposit requires an adhesive layer first, otherwise the plated tungsten will flake off. Selective deposition directly fills metal tungsten into the contact window and dielectric window holes by chemical vapor deposition, reducing the manufacturing process, and the generated tungsten grows on the nucleation layer at the bottom of the contact window or dielectric window until it fills the entire hole without growing in the oxide dielectric above. There is no need to add an adhesion layer to the oxide surface, and no need...

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Abstract

The invention provides a method for solving thick titanium nitride (TiN) film cracks in a contact hole. Different from the sequence of the prior process procedures, the method carries out quick heat treatment first, then deposits a second TiN layer, and finally deposits metal tungsten. Therefore, the second TiN layer deposited after quick heat treatment can cover the TiN film cracks caused by the quick heat treatment, make the thickness of TiN equivalent to the original thickness and avoid lateral erosion caused by the cracks. Therefore, the method ensures the smooth operation of the following process and effectively prevents reaction of WF6, the silicon substrate and oxides, thereby guaranteeing the quality of crystals.

Description

technical field [0001] The invention relates to a method for optimizing a wafer preparation process, in particular to a method for solving cracks in a contact hole thick TiN film in the wafer preparation process. Background technique [0002] With the evolution of semiconductor production technology, the minimum width of integrated circuit design and manufacturing continues to shrink. On the one hand, more transistors can be accommodated in the die, on the other hand, due to the increase in the integration of components, the surface of the chip cannot provide enough area to make the required interconnection. In order to meet the increased interconnection requirements after the transistor shrinks, the metallization design of more than two layers has gradually become the method that many integrated circuits must adopt. In the multi-layer metal thin film structure, the contact window used to connect the source, drain and gate electrodes of the transistor to the metal wire, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/3205H01L21/321
Inventor 陆鸣晔陈立轩
Owner HEJIAN TECH SUZHOU
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