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Junction capacitance test method for bipolar transistor

A technology of bipolar transistors and testing methods, which is applied in the direction of single semiconductor device testing, measuring devices, measuring electrical variables, etc., can solve problems such as increasing the area of ​​testing chips, and achieve the effect of improving testing accuracy and data reliability

Active Publication Date: 2011-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to solve this problem, people often use the method of connecting devices in parallel to artificially increase the capacitance value, but this method will increase the area of ​​the test chip, and at the same time, it will artificially introduce the parasitic effect of the wiring

Method used

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  • Junction capacitance test method for bipolar transistor
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Embodiment Construction

[0018] In the bipolar transistor junction capacitance test circuit of the present invention, the emitter of the bipolar transistor is directly grounded, the base of the bipolar transistor is connected to port 1 of the 2-port network, and the collector of the bipolar transistor is connected It is port 2 of a 2-port network.

[0019] According to the above circuit, a method for testing the junction capacitance of a bipolar transistor of the present invention includes the following steps:

[0020] (1) A scan voltage from negative voltage to +0.7 volts is applied to the base terminal of the bipolar transistor.

[0021] (2) Apply a voltage of 0V to the collector terminal of the bipolar transistor;

[0022] (3) Determine the test frequency to be 10 GHz, and measure the Y parameters between the two ports of the 2-port network. The Y parameters include Y11, Y12, and Y21. Y11 represents the input admittance corresponding to port 1 when port 2 is short-circuited; Y12 represents the transfer ad...

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Abstract

The invention discloses a junction capacitance test circuit for a bipolar transistor; the emitter of the bipolar transistor is directly grounded; the base of the bipolar transistor is connected as the port 1 of a two-port network; and the collector of the bipolar transistor is connected as the port 2 of the two-port network. The invention further discloses a junction capacitance test method for the bipolar transistor based on the circuit; using the combination of simple circuit structure and the calculation method of high-frequency parameters, the invention can be used for small junction capacitance of10e-15 Nesscap and effectively improves test accuracy and reliability of data.

Description

Technical field [0001] The invention relates to a method for testing the junction capacitance of a bipolar transistor. Background technique [0002] Bipolar transistors are one of the important devices used in modern semiconductor integrated circuits, especially in the application of radio frequency integrated circuits. However, it is difficult to determine the junction capacitance of the device. The main reason is that the layout size of a single bipolar transistor is generally small, and the corresponding junction capacitance is often in the order of 10e-15 farads. Therefore, the numerical error obtained by the test with an ordinary capacitance meter is relatively large. To solve this problem, people often use the method of paralleling devices to artificially increase the capacitance value, but this method will increase the area of ​​the test chip, and at the same time will artificially introduce the parasitic effect of the wiring. Summary of the invention [0003] The technic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/26G01R31/26
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP