Dye sensitive nanometer thin film solar battery with electronic composite restraining structural layer and preparation thereof

Abstract

The invention relates to a dye sensitive nanometer thin film solar battery with an electronic composite restraining structural layer. The battery structure is an ITO / TiO2 electrode for absorbing dye molecule / electrolyte / an electronic composite restraining structure / a Pt counter electrode / ITO; the electrolyte is added between the ITO / TiO2 electrode for absorbing the dye molecule and the counter electrode on an ITO base plate to form the battery to be directly superimposed together, and the electrolyte can be encapsulated and sealed on the periphery of the battery by using package resin; and the electronic composite restraining structure is aluminum oxide, silicon oxide, polymer or P-shaped semiconductor materials evaporated or sprayed on both the counter electrode or / and TiO2 electrode.

Description

technical field The invention relates to a dye-sensitized nano-thin film solar cell with an electron recombination inhibiting structure layer and a preparation method. It belongs to the field of nanometer and also belongs to the field of new energy. Background technique Energy issues are related to global sustainable development and have become a key factor restricting social development. Compared with the expensive production cost and complicated preparation process of silicon solar cells, which currently occupy a dominant position in the market, the most attractive feature of dye-sensitized solar cells (DSSC) is its cheap raw materials and relative It has simple manufacturing process, stable performance and low attenuation, and has great application prospects. In 1991, the nanoporous TiO2 film with high specific surface area was applied to dye-sensitized solar cells, and the photoelectric conversion efficiency reached 7.1%. The area of ​​the nanocrystalline TiO2 porous...

AI Technical Summary

Problems solved by technology

As shown in Figure 1, the battery with this structure has the following problems: due to the objective existence of actual process manufacturing errors and stress deformation caused by high temperature treatment, there are flatness errors in the conductive substrate, oxide semiconductor layer, and counter electrode, resulting in a flatness of the working electrode. There is direct contact with the counter electrode, so that the working electrode in the battery is short-circuited with the counter electrode, the efficiency of electron injection into the external circuit drops sharply, the redox reaction rate of electron injection into the electrolyte drops sharply, and the battery efficiency drops

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