Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for improving back pollution of work piece during manufacturing process of semiconductor

A technology for processing parts and semiconductors, which is applied in the field of improving the contamination of the backside of the processed parts in the semiconductor manufacturing process, can solve the problems of ineffective improvement and frequent consumption of the focus ring, and achieves the effect of increasing the effect and improving the backside contamination.

Active Publication Date: 2009-06-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can reduce the polymer on the back of the workpiece to a certain extent, it still cannot effectively improve this phenomenon; and after the focus ring is replaced with aluminum material, due to the extension of the electric field to the edge of the workpiece, the focus ring consumption becomes more frequent, thus increasing the CoC

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving back pollution of work piece during manufacturing process of semiconductor
  • Method for improving back pollution of work piece during manufacturing process of semiconductor
  • Method for improving back pollution of work piece during manufacturing process of semiconductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] like image 3 As shown, 8 small holes 5 are symmetrically arranged on the inner edge of the bottom of the focus ring 3, and the aperture is 3mm; as Figure 4 As shown, after all the process steps are finished, CF is injected into the back of the workpiece 2 through the small hole 5 at the bottom of the focus ring 3 4 For gas, the flow rate is 100sccm, the pressure is maintained at 60mT, the power of the upper electrode is maintained at 300w, and the plasma ignition is maintained for a duration of 8s. Incoming CF 4 The gas interacts with the polymer on the backside of the workpiece and substantially removes the polymer.

Embodiment 2

[0022] Six small holes 5 are symmetrically arranged on the inner edge of the bottom of the focus ring 3, and the aperture is 5mm; as Figure 4 As shown, the distance h from the bottom surface of the workpiece 2 to the upper surface of the focus ring 3 is adjusted to 2mm. After all the process steps are completed, CHF is introduced to the back of the workpiece 2 through the small hole 5 at the bottom of the focus ring 3. 3 Gas, the flow rate is 200sccm, the pressure is maintained at 50mT, the power of the upper electrode is maintained at 200w, and the plasma ignition is maintained for a duration of 5s. 3 The gas interacts with the polymer on the backside of the workpiece and substantially removes the polymer.

Embodiment 3

[0024] On the inner edge of the bottom of the focus ring 3, 10 small holes 5 are symmetrically arranged, and the aperture is 1 mm; as Figure 4 As shown, the distance h from the bottom surface of the workpiece 2 to the upper surface of the focus ring 3 is adjusted to 11mm. After all the process steps are completed, C 2 f 6 Gas, the flow rate is 50sccm, the pressure is maintained at 60mT, the upper electrode power is maintained at 400w, the plasma ignition is maintained, the duration is 10s, and the C 2 f 6 The gas interacts with the polymer on the backside of the workpiece and substantially removes the polymer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method which is used for improving back pollution of a work piece during the manufacturing process of a semiconductor, wherein, bottom of a focusing ring is provided with small holes on the inner edge; after all the manufacturing processes, the small holes at the bottom of the focusing ring are used for inletting gas to the back of the work piece, wherein, the gas can effect on pollutants on the back of the work piece, so as to maintain plasma starter. The distance between the bottom surface of the work piece and the upper surface of the focusing ring is adjusted to 2-11 millimetres; the small holes at bottom of the focusing ring are symmetrically arranged, wherein, the apertures are 1-5 millimetres; the gas comprises F base-containing gas and oxygen, wherein, the F base-containing gas is selected from CF4, GHF3, C2F6 or C4F8; the flux of the inlet gas is 50-200sccm and is preferably 100sccm; the inlet time is 1-10 seconds and is preferably 5-10 seconds; power of the upper electrode is maintained at 200-400W and the pressure of the chamber is maintained at 40-60mT. The method of the invention can effectively remove polymers generated on the back of the work piece during the manufacturing process of a semiconductor without causing adverse effect.

Description

technical field [0001] The invention relates to a method for improving the pollution on the back of the workpiece, in particular to a method for improving the pollution on the back of the workpiece in the semiconductor manufacturing process. Background technique [0002] In the semiconductor process, due to the directional and radial movement of the plasma, some ions will collide with the focus ring 3 on the edge of the electrostatic chuck 1, so some ions will produce some polymers on the back of the edge of the workpiece 2, such as figure 1 shown. These polymers will cause certain pollution to the manipulator used for transmission, the transmission chamber, and the box where the processed parts are placed during the process of returning the processed parts; if they are not removed in time, they will also cause certain pollution to the subsequent process. Therefore, it is an important issue to effectively improve the pollution on the back of the workpiece in the semiconduct...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02
Inventor 霍秀敏
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD