Chemical-mechanical polishing liquid for copper process
A chemical mechanical and polishing liquid technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that cannot meet the requirements of copper process polishing rate and selectivity ratio, wafer surface defects, pollution residues, etc., to achieve The effect of reducing substrate surface contamination, sticking and other residues, and preventing local and overall corrosion
Active Publication Date: 2013-01-16
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome the defect that the existing chemical mechanical polishing liquid used for copper process is easy to cause wafer surface defects, pollution residue and corrosion, and cannot meet the requirements of copper process for polishing rate and selectivity ratio, And provide a kind of chemical-mechanical polishing fluid that can solve the above-mentioned problem and be used for copper process
Method used
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Embodiment 1～9
[0022] Table 1 has provided polishing liquid 1~9 of the present invention, with formula in the table, each composition is mixed, and deionized water is surplus, finally with pH adjusting agent (20%KOH or dilute HNO 3 , select according to the needs of the pH value) to adjust to the required pH value, continue to stir until a uniform fluid, and stand still for 30 minutes to obtain various chemical mechanical polishing fluids.
[0023] Table 1 Polishing liquid 1~9 formula of the present invention
[0024]
[0025]
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The present invention discloses a chemical machinery polishing solution used in copper plating, which contains seat grinding granule, organanic phosphonic acid compounds, azole nitrogen compounds, oxidizer and carrier. The polishing solution provided in the invention can guaranty polishing rate of speed with little seat grinding granule dosage, and deduce defect, cullet cut, sticky dirt and otherresidue obviously at the same time, hence reduce infectant on substrate surface; appropriate copper / tantalum remove rate selection ratio is provided to satisfy copper plating polishing requirement; can prevent local and whole corrosion that generated in metal polishing process and improve product yield rate.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid used in a copper manufacturing process. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. The material of VLSI wiring is changing from traditional Al to Cu. Compared with Al, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce the cost by 30%, and shorten the processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. [0003] However, there is cur...
Claims
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IPC IPC(8): H01L21/314
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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