Bi-stable acceleration induction micro-switch based on adhesion
A technology of acceleration sensing and micro-switching, which is applied in the direction of electric switches, coupling of optical waveguides, and components of TV systems, etc. Mis-off and other problems, to improve the conduction reliability, avoid external disturbances, and easy to assemble
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2011-07-20
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention belongs to the technical field of electronic components, in particular to an inductive micro switch, which can be used in safety airbags and anti-lock braking systems of automobiles. technical background
[0002] The inductive micro switch is processed by micro-electro-mechanical system (MEMS for short) technology, which can sense acceleration, and is controlled by the acceleration threshold value, and performs switching action through multi-force coupling. It integrates sensing, control and execution, and has the characteristics of small size, high reliability, and simple structure. Therefore, it has a strong demand in trigger fields such as aerospace systems, automotive airbags and anti-lock braking systems, and household appliances. .
[0003] In 2004, the Vienna University of Technology developed a dual-mass-spring inductive microswitch [Alexander R. Neuhaus, Werner F. Rieder, and Martin Hammerschmidt, Influence of Electrical and Mec...
Examples
Embodiment 1
[0029] Embodiment 1, the inductive micro switch of the present invention consists of three parts: a frame body, an inductive component and an electrode plate. Wherein the frame body is composed of the left and right frames 32, the upper top cover 31 and the lower bottom cover 33 to form an airtight cavity; the sensing part is composed of a sensing mass 34 and a support beam 35, both of which are photolithographically integrated, and the support beam 36 adopts two ends. The straight beam structure is fixed on the frame 32, and the distance h between the mass block 34 and the upper top cover 31 is 1 μm. A gold film is deposited on the lower part of the mass block 34 to form a movable plate 36, and two hemispherical contacts 37 are arranged on the movable plate 36; a gold film is deposited on the inner side of the lower bottom cover 33 to form a fixed plate 38 . The gap between the movable plate 36 and the fixed plate 38 is 10 μm, and a DC voltage of 26V is passed between the tw...
Embodiment 2
[0030]Embodiment 2, the inductive micro switch of the present invention consists of three parts: a frame body, an inductive component and an electrode plate. Wherein the frame body is composed of the left and right frames 32, the upper top cover 31 and the lower bottom cover 33 to form an airtight cavity; the sensing part is composed of a sensing mass 34 and a support beam 35, both of which are photolithographically integrated, and the two ends of the support beam are The straight beam structure is fixed on the frame 32, and the distance h between the mass block 34 and the upper top cover 31 is 0.6 μm. A gold film is deposited on the lower part of the mass block 34 to form a movable plate 36, and two hemispherical contacts 37 are arranged on the movable plate 36; a gold film is deposited on the inner side of the lower bottom cover 33 to form a fixed plate 38 . The gap between the movable plate 36 and the fixed plate 38 is 10 μm, and a DC voltage of 26V is passed between the t...
Embodiment 3
[0031] Embodiment 3, the inductive micro switch of the present invention consists of three parts: a frame body, an inductive component and an electrode plate. Wherein the frame body is composed of the left and right frames 32, the upper top cover 31 and the lower bottom cover 33 to form an airtight cavity; the sensing part is composed of a sensing mass 34 and a support beam 35, both of which are photolithographically integrated, and the two ends of the support beam are The straight beam structure is fixed on the frame 32, and the distance h between the mass block 34 and the upper top cover 31 is 0.1 μm. A gold film is deposited on the lower part of the mass block 34 to form a movable plate 36, and two hemispherical contacts 37 are arranged on the movable plate 36; a gold film is deposited on the inner side of the lower bottom cover 33 to form a fixed plate 38 . The gap between the movable plate 36 and the fixed plate 38 is 10 μm, and a DC voltage of 26V is passed between the ...