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Method for forming an electronic device on a flexible metallic substrate and resultant device

A technology of metal substrates and electronic devices, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve problems such as limitations, substrate material types, and differences in thermal expansion coefficients

Inactive Publication Date: 2009-08-12
CARESTREAM HEALTH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, metal substrates exhibit significant coefficient of thermal expansion (CTE) differences from glass
Excessive stress during heating or cooling cycles can damage the glass or cause the metal substrate to detach prematurely from the glass carrier, losing its dimensional stability
[0006] From this it can be seen that although great attention has been paid to developing and expanding the application of metals as flexible substrates, the compatibility with conventional glass supports still imposes some constraints on the type of substrate material.

Method used

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  • Method for forming an electronic device on a flexible metallic substrate and resultant device
  • Method for forming an electronic device on a flexible metallic substrate and resultant device
  • Method for forming an electronic device on a flexible metallic substrate and resultant device

Examples

Experimental program
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Embodiment 1

[0030] In one embodiment, the material used for carrier 18 is a stainless steel sheet having a thickness of approximately 50.8 millimeters. Substrate 20 is a stainless steel foil having a thickness of approximately 0.762 millimeters.

[0031] Using these materials, the TFT fabrication process using the flexible substrate 20 is as follows:

[0032] 1. Surface preparation. exist Figure 4 In this step shown in the perspective view of , a thin Teflon (PTFE) coating is applied as adhesive material 30 onto the contact surface 32 of the flexible substrate 20 . This can be applied using any suitable deposition technique. For smaller substrates 20, a thickness of about 0.127 to 1.27 millimeters is sufficient; this thickness can vary with the desired stiffness and area of ​​the flexible substrate 20.

[0033] 2. Positioning. The substrate 20 is positioned so that it is centered on the retention surface 24 on the carrier 18 .

[0034] 3. Lamination. Substrate 20 is laminated to car...

Embodiment 2

[0040] In another embodiment, the adhesive temporarily secures the substrate 20 to the carrier 18 . Subsequently, the TFT manufacturing steps are as follows:

[0041] 1. Fixing the substrate 20 to the carrier 18 . The flexible substrate 20 is bonded to the carrier 18 . This is done by applying an adhesive of suitable thickness or peel strength to substrate 20 and / or carrier 18 . Pressure or a combination of heat and pressure may be used to bond substrate 20 in place. Squeeze out trapped air from between the carrier and substrate.

[0042] 2. Planarization. In some applications, the desired surface roughness for TFT deposition may be below about 0.2 to 0.3 microns peak-to-peak or better. Planarizing materials can be added to the exposed substrate surface to achieve this level of smoothness.

[0043] 4. Formation of an electrical insulating layer. As a final surface preparation step (which may be optional) for modifying the surface of the substrate, an electrically insula...

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Abstract

A method for forming an electronic device provides a metallic carrier having a retaining surface and secures a contact surface of a metallic substrate material against the retaining surface of the metallic carrier. The substrate is processed to form the electronic device thereon; and the metallic substrate material released from the metallic carrier, to yield the completed electronic device.

Description

technical field [0001] The present invention relates generally to electronic device fabrication, and more particularly to methods of affixing a metal carrier to a metal substrate, forming an electronic device on the substrate, and then removing the substrate from the carrier to obtain the completed electronic device. Background technique [0002] Thin film transistor (TFT) devices are widely used in switching or driving circuits for electro-optic arrays and display panels. TFT devices are traditionally fabricated on rigid substrates, usually glass or silicon, using a well-known sequence of deposition, patterning, and etching steps. For example, amorphous silicon TFT devices require metals such as aluminum, chromium, or molybdenum; amorphous silicon semiconductors; and insulators such as SiO 2 or Si 3 N 4 Deposition onto substrate, patterning and etching. The semiconductor thin film is formed in layers with a typical thickness of several nanometers to several hundred nano...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/84
CPCH01L29/78603Y10T428/12493H01L21/6835H01L27/1266H05K1/0393H05K3/007
Inventor R·S·克尔T·J·特雷威尔M·A·哈兰J·T·默里
Owner CARESTREAM HEALTH INC