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Semiconductor device with capacitor and producing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as increasing electrostatic capacitance

Inactive Publication Date: 2009-08-19
FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, since a ferroelectric material is used as a capacitor dielectric film, it is easier to increase the electrostatic capacitance than when an insulating material is usually used.

Method used

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  • Semiconductor device with capacitor and producing method thereof
  • Semiconductor device with capacitor and producing method thereof
  • Semiconductor device with capacitor and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0062] exist figure 1 An equivalent circuit diagram of the semiconductor device of the first embodiment is shown in . The semiconductor device of the embodiment includes a memory cell unit 1 and a power circuit unit 2 .

[0063] In memory cell section 1, the figure 1 A memory cell is disposed at each intersection of a plurality of word lines (word lines) WL extending in the lateral direction and a plurality of bit lines (bit lines) BL extending in the vertical direction. Each memory cell is constituted by a MOS transistor (switching element) 10 and a ferroelectric capacitor 11 . A plate line PL is arranged corresponding to the word line WL.

[0064] The gate electrode of the MOS transistor 10 is connected to the word line WL, the source is connected to the bit line BL, and the drain is connected to one electrode of the ferroelectric capacitor 11 . The other electrode of the ferroelectric capacitor 11 is connected to the corresponding plate line PL. When an electrical sign...

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PUM

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Abstract

[PROBLEMS] To provide a semiconductor device capable of preventing degradation of TDDB attributed to an increase in the area of a capacitor. [MEANS FOR SOLVING PROBLEMS] A capacitor is formed on a semiconductor substrate. The capacitor has a structure in which a lower electrode, a capacitor dielectric film, and an upper electrode are stacked in this order. When S is the area of a capacitor region in which the lower electrode and the upper electrode are facing to each other across the dielectric film and L is the total length of the peripheral line of the capacitor region, the area S is not less than 1000 [mu]m and L / S is not less than 0.4 [mu]m.

Description

technical field [0001] The present invention relates to a semiconductor device having a capacitor, and more particularly to a semiconductor device having a capacitor conforming to the structure of a smoothing capacitor using a capacitor dielectric film formed of a ferroelectric material. Background technique [0002] In a ferroelectric memory (FRAM) disclosed in Patent Document 1 below, a ferroelectric capacitor is used as a smoothing capacitor for a power supply circuit of a semiconductor element. Since the smoothing capacitor is formed simultaneously with the capacitor (cell capacitor) in each memory cell of the ferroelectric memory, it is not necessary to add a new process for forming the smoothing capacitor. In addition, since a ferroelectric material is used as a capacitor dielectric film, it is easier to increase the electrostatic capacitance than when an insulating material is generally used. [0003] Patent Document 1: International Publication No. 2006 / 011196 pamph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8246H01L21/822H01L27/04H01L27/10H01L27/105
CPCH01L27/11507H01L27/11504H01L28/55H10B53/10H10B53/30H10B99/00H10B12/00
Inventor 立花宏俊
Owner FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA