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Method for arranging memory, controller, and nonvolatile memory system

A non-volatile storage and non-volatile technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as wrong data transmission, erasing times limit, storage space waste, etc.

Active Publication Date: 2012-06-13
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although non-volatile memory has the above advantages, there are still problems such as the limitation of erasing times, the waste of storage space during data transmission, and wrong data transmission.

Method used

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  • Method for arranging memory, controller, and nonvolatile memory system
  • Method for arranging memory, controller, and nonvolatile memory system
  • Method for arranging memory, controller, and nonvolatile memory system

Examples

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Embodiment Construction

[0021] figure 1 , Figure 2A ,as well as Figure 2B A first preferred embodiment of the invention is shown. This embodiment provides a controller 11 and a nonvolatile semiconductor storage module 10 . The controller 11 includes a processor 113 , a decoding module 112 , an encoding module 114 , a reading module 111 , and a setting module 115 . The processor 113 is used to control other units of the controller 11 . The decoding module 112 is electrically connected to the processor 113 and used for decoding data. The encoding module 114 is electrically connected to the processor 113 and used for encoding data. The reading module 111 is electrically connected to the processor 113 and used for reading data. The setting module 115 is electrically connected with the processor 113 and used for setting data. The non-volatile semiconductor memory module 10 is used to store data. In this embodiment, the nonvolatile semiconductor memory module 10 can be a single level cell (Single...

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Abstract

The invention discloses a method for arranging a nonvolatile memory. The memory is provided with unidirectional bit signals; the method comprises the following steps of a) providing a first data which respectively comprises the first state continuous bit of the first number in the nonvolatile memory data page; b) decoding the first state continuous bit of the first number in the first data as thesecond state continuous bit of the second number; and c) arranging a second data for the part of the first state decoded as the second state in the data page.

Description

technical field [0001] The present invention relates to a non-volatile memory and a programming method thereof, and in particular to a device for an Electrically Erasable Programmable Read-Only Memory (EEPROM) or a flash memory A setting device and a setting method of a non-volatile memory for unidirectionally setting a bit signal. Background technique [0002] Non-volatile memory is widely used in data storage devices, especially EEPROM and flash memory. Due to the characteristics of small size, low power consumption, high-speed transmission, and high stability, the flash memory in the form of embedded and removable cards is suitable for mobile and handheld device environments. Although the non-volatile memory has the above-mentioned advantages, there are still problems such as the limitation of erasing times, waste of storage space during data transmission, and wrong data transmission. [0003] Therefore, there is an urgent need for a non-volatile memory setting method f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/42G11C16/00G11C17/00G06F11/10
Inventor 游祥雄张毓安
Owner PHISON ELECTRONICS
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