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Microelectronic assembly and method for forming the same

A technology of microelectronics and components, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of increasing the manufacturing cost of the device, increasing the thickness of the coil, increasing the size, etc.

Inactive Publication Date: 2009-09-30
FREESCALE SEMICON INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing the thickness of the coil increases the size and manufacturing cost of the device

Method used

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  • Microelectronic assembly and method for forming the same
  • Microelectronic assembly and method for forming the same
  • Microelectronic assembly and method for forming the same

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Embodiment Construction

[0024] The following detailed description is exemplary only in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any theory expressed or implied in the preceding technical field, background, brief summary or the following detailed description. Note also that Figure 1-18 They are merely illustrative and may not be drawn to scale.

[0025] Figure 1-12 A method of forming a microelectronic assembly including a spiral inductor is shown in accordance with one embodiment of the invention. refer to figure 1 , shows the semiconductor substrate 20 . The semiconductor substrate 20 is made of a semiconductor material such as silicon and includes an upper surface 22 and a lower surface 24 . The thickness of substrate 20 may be approximately 1000 microns. Although only a portion of semiconductor substrate 20 is shown, it should be understood that substrate 20 may be a semiconductor wafer...

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Abstract

According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first (28) and second (30) trenches on a semiconductor substrate (20), filling the first (28) and second (30) trenches with an etch stop material (42), forming an inductor (56) on the semiconductor substrate (20), forming an etch hole (60) in at least one of the etch stop layer (42) and the semiconductor substrate (20) to expose the substrate (20) between the first (28) and second trenches (30), isotropically etching the substrate (20) between the first (28) and second trenches (30) through the etch hole (60) to create a cavity (66) within the substrate (20), and forming a sealing layer (70) over the etch hole (60) to seal the cavity.

Description

technical field [0001] The present invention generally relates to a microelectronic assembly and a method of forming a microelectronic assembly, and more particularly to a method of forming an air cavity under a spiral inductor. Background technique [0002] Integrated circuits are formed on semiconductor substrates or wafers. The wafer is then diced into microelectronic chips, or semiconductor chips, each carrying individual integrated circuits. Each semiconductor chip is mounted to a package or carrier substrate, which is typically mounted on a motherboard. [0003] The completion of an integrated circuit involves multiple process steps and the formation of various devices on a semiconductor substrate. Depending on the intended use of the semiconductor chip, one of the devices formed on the semiconductor substrate may be an inductor. Spiral inductors are often used in radio frequency (RF) devices and typically include a thin metal coil formed over a dielectric material....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
CPCH01L21/764H01L27/08H01L28/10H01L27/02H01L29/00
Inventor 比什努·P·戈戈伊
Owner FREESCALE SEMICON INC
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