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Nonlinear equivalent circuit of PIN diode

An equivalent circuit and non-linear technology, applied in the field of effective circuits, can solve problems such as inability to integrate circuit simulation software, compatibility with non-linear equivalent circuits, etc.

Inactive Publication Date: 2009-10-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Theoretical analysis describing the impedance-frequency relationship has been studied, but because there is no corresponding nonlinear equivalent circuit, it cannot be integrated and compatible with existing circuit simulation software

Method used

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  • Nonlinear equivalent circuit of PIN diode
  • Nonlinear equivalent circuit of PIN diode
  • Nonlinear equivalent circuit of PIN diode

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] The non-linear equivalent circuit of this PIN diode provided by the present invention is based on the DC control model of the PIN diode, considering the conduction modulation of the AC large signal to the intrinsic layer (I layer) of the PIN tube, and integrating the PIN tube The influence of the impedance-frequency relationship, terminal recombination effect and self-bias effect, and can integrate a non-linear equivalent circuit compatible with existing circuit simulation software.

[0026] The study of the nonlinearity of the PIN diode is carried out under the state of large injection, that is, the input microwave signal of the PIN tube is very large, so large that only the microwave signal can drive the PIN tube ...

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Abstract

The invention discloses a nonlinear equivalent circuit of a PIN diode, which comprises a parasitic resistor, a P-I junction equivalent circuit unit, an intrinsic region I equivalent circuit unit, an I-N junction equivalent circuit unit and a reverse capacitor, wherein the parasitic resistor, the P-I junction equivalent circuit unit, the region I equivalent circuit unit and the I-N junction equivalent circuit unit are sequentially connected in series, and the reverse capacitor is connected in parallel with the P-I junction equivalent circuit unit, the region I equivalent circuit unit and the I-N junction equivalent circuit unit. The invention realizes the simulation of an RF / MW circuit comprising the PIN diode. The invention is especially suitable for the analysis of the harmonic wave and the intermodulation distortion of the RF / MW circuit of the PIN diode.

Description

technical field [0001] The invention relates to the technical field of radio frequency / microwave devices, in particular to a nonlinear equivalent circuit of a PIN tube. Background technique [0002] PIN tubes are widely used in active and passive microwave and radio frequency fields because of their high cut-off frequency, small forward conduction resistance, low reverse turn-off capacitance, strong power handling capability, relatively simple manufacturing technology, and low cost. Includes phase shifters, switches, attenuators and limiters. [0003] In all these applications, key parameters such as switching time, cut-off frequency and intermodulation depend on charge storage effects in the intrinsic region. The intrinsic region is the undoped or low doped layer between the highly doped P and N layers. Complex charge storage phenomena occur in the intrinsic region, causing the impedance of the device to vary significantly with frequency and bias. [0004] The traditiona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 吴茹菲张海英尹军舰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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