Drive method of photoelectric film transistor, photoelectric sensor and plane display

A photoelectric sensor, thin film transistor technology, applied in photometry, static indicators, instruments, etc., can solve the problems of low photoelectric conversion efficiency of photoelectric thin film transistors, low reliability of photoelectric sensors, and low reliability of flat-panel displays, etc. Effects of improved attenuation, improved photoelectric conversion efficiency, and improved reliability

Inactive Publication Date: 2009-10-21
INNOCOM TECH SHENZHEN +1
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the problem of low reliability of photoelectric sensors in the prior art, it is necessary to provide a photoelectric sensor with high reliability
[0010] In order to solve the problem of low reliability of prior art flat-panel displays, it is also necessary to provide a flat-

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Drive method of photoelectric film transistor, photoelectric sensor and plane display
  • Drive method of photoelectric film transistor, photoelectric sensor and plane display
  • Drive method of photoelectric film transistor, photoelectric sensor and plane display

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] See figure 2 , Which is a schematic circuit diagram of the first embodiment of the photoelectric sensor of the present invention. The photoelectric sensor 20 includes a thin film transistor 21, a voltage dividing resistor 22, a first voltage output terminal 23, a second voltage output terminal 24 and a signal output terminal 25. The thin film transistor 21 is an amorphous silicon thin film transistor, which includes a gate 211, a source 212, and a drain 213. The gate 211 is connected to the first voltage output terminal 23, the source 212 is connected to the second voltage output terminal 24, and the drain 213 is connected to the signal output terminal 25 and grounded via the voltage divider 2.

[0023] The first voltage output terminal 23 and the second voltage output terminal 24 respectively output a first voltage and a second voltage to the gate 211 and the source 212 to drive the thin film transistor 21.

[0024] The first voltage output terminal is an AC voltage outpu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a drive method of a photoelectric film transistor, a photoelectric sensor and a plane display using the photoelectric sensor. The photoelectric sensor comprises a film transistor, wherein drive signals provided to a grid of the film transistor are alternating current voltage. The reliability of the photoelectric sensor is higher.

Description

technical field [0001] The invention relates to a driving method of a photoelectric thin film transistor, a photoelectric sensor and a plane display using the photoelectric sensor. Background technique [0002] Due to the advantages of lightness, thinness, and low power consumption, Flat Panel Displays (FPDs) are widely used in modern information devices such as notebook computers, mobile phones, and personal digital assistants. As a display device of a flat panel display, its display brightness is an important performance parameter. Usually, in order to meet the display brightness requirements of different external ambient light intensities, the display brightness of the flat-panel display needs to be adjusted. For example, in a dark room, adjust the display brightness of the flat panel display to a relatively low display brightness, so as to avoid damage to the viewer's eyes due to excessive brightness. [0003] In order to enable the flat panel display to adjust its dis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G09G3/20G09G3/36G01J1/44
CPCG09G2360/14G01J2001/4242G09G2320/0626G01J1/44G01J1/4204
Inventor 许福源
Owner INNOCOM TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products