Device for blending etching solution and device for determinating concetration of etching solution
An etching solution and concentration technology, which is applied in control/regulation systems, semiconductor/solid-state device testing/measurement, instruments, etc., can solve problems such as the reduction of nitric acid concentration and the lack of continuous measurement of the concentration of etching solution components, so as to improve the yield and accuracy Good and constant, direct supply reduction effect
Inactive Publication Date: 2009-10-28
HIRAMA LAB
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Problems solved by technology
Furthermore, the acetic acid in the etchant is volatile, so the concentration of acetic acid decreases, and nitric acid acts as NO x The problem of gas volatilization, resulting in a decrease in the concentration of nitric acid
[0013] In addition, there is no etching solution mixing device in the continuous mixing method not only on the use side, but also on the supply side.
This is because there is no concentration measuring device that continuously measures the component concentration of the etching solution.
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[0042] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, unless otherwise specified, the shapes of the structural devices described in these embodiments, their corresponding arrangements, and the like are not limited thereto, and are merely illustrative examples.
[0043] figure 1 It is a device system diagram showing the first embodiment of the present invention. The reference symbols in the figure are the equipment and components constituting the etchant mixing device. That is, the etchant mixing device includes: a mixing tank 1 for mixing the etching solution, a liquid level gauge 2, a circulation pump 11 for cleaning and stirring the etching solution (also transporting to the etching device at the same time), a pipeline 12. Filter 13 for removing fine particles in etching solution, gas valve 14 for circulating stirring, phosphoric acid stock solution supply tank 20, flow regulating valve 24 f...
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The present invention provides a etching solution blending device which is used in a semiconductor manufacturing works or flat-panel display manufacturing works and is capable of constantly blending nitric acid concentration, moisture concentration, phosphoric acid concentration and acetic acid concentration of the etching solution. The device comprises: an electric conductivity meter for detecting the electric conductivity of the dilution formed by adding pure water into etching solution in a blending tank or an absorption spectrophotometer for detecting the nitric acid concentration of the etching solution, an absorption spectrophotometer for detecting the moisture concentration of the etching solution, an absorption spectrophotometer or a densitometer for detecting the phosphoric acid concentration of the nitric acid, a component concentration operation mechanism for operating the component concentration of the etching solution by multi-component operation method according to the electric conductivity value of the nitric acid concentration conductivity meter, the absorbency value of the moisture concentration absorption spectrophotometer, and the absorbency value of the phosphoric acid concentration absorption spectrophotometer or the density value of the densitometer, and a replenishing mechanism for replenishing at least one of acid original solution, mixed acid original solution and pure water into the blending tank.
Description
technical field [0001] The present invention relates to the use of pipelines and aluminum films (such as films of aluminum or aluminum alloys, first films of molybdenum or molybdenum alloys) in semiconductor manufacturing processes or flat panel display manufacturing processes (liquid crystal substrate manufacturing processes, organic EL display manufacturing processes, etc.) An etching solution mixing device connected to an etching device for the second thin film of aluminum or aluminum alloy (hereinafter referred to as an aluminum film). Background technique [0002] In the etching process of the aluminum film in the liquid crystal substrate manufacturing process, etc., as the etching solution, a mixed aqueous solution of nitric acid and phosphoric acid, a mixed aqueous solution of nitric acid, phosphoric acid and acetic acid, a mixed aqueous solution of nitric acid, phosphoric acid and malonic acid, etc. are mainly acids. The mixed acid aqueous solution of the components ...
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IPC IPC(8): H01L21/00H01L21/66C23F1/08
CPCC23F1/20G05D21/02H01L21/67075
Inventor 中川俊元佐藤寿邦
Owner HIRAMA LAB
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