Measurement method of series resistors inside solar energy battery and measurement system

A technology of solar cells and internal series connection, applied in the measurement of electrical variables, measurement devices, monitoring of photovoltaic systems, etc., can solve the problems of replacement of xenon bulbs, frequent maintenance, low numerical accuracy, and increased maintenance costs, and shorten the measurement time. effect of time, extended service life, and easy-to-assurance accuracy

Inactive Publication Date: 2009-12-16
CHROMA ELECTRONICS SHENZHEN
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Problems solved by technology

The biggest disadvantage of these methods for extracting various parameters is that because there are four interrelated parameters, the series resistance value is only one of them, and the forward I-V curve is not linear, so that these four parameters only depend on a nonlinear relationship. The accuracy of the calculated value is low, only about 5% to 15%
Considering that the light bulbs of solar simulators are mainly Xe lamps, their power is about 1000-2000W, and the temperature is extremely high. Therefore, common fixed power solar simulators cannot Two different stable power
[0011] The other is a pulse type (pulse) sunlight simulator, although it can provide two different powers of light intensity within 1 to 2 seconds, such as 1000w / m 2 and 500w / m 2 , but its xenon bulb needs to be triggered with high voltage (about 20,000V) every time to light up, and its service life (life-time) is shorter than that of ordinary fixed power bulbs, resulting in frequent replacement and maintenance of xenon bulbs Frequent maintenance will increase the maintenance cost and reduce the detection rate in disguise

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  • Measurement method of series resistors inside solar energy battery and measurement system
  • Measurement method of series resistors inside solar energy battery and measurement system
  • Measurement method of series resistors inside solar energy battery and measurement system

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[0034] The foregoing and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the accompanying drawings.

[0035] The present invention is obtained by improving the specification of IEC-891, referring to the appended image 3 The measurement method and Figure 4 The schematic diagram of the measurement system circuit is as follows: firstly, in step 31, the solar cell 1 is placed in a shield 40 as a shielding environment to isolate external ambient light and noise interference. And in step 32, the light source 42 is instructed by the control device to apply a beam of simulated sunlight to the solar cell 1 under test. In this embodiment, the simulated sunlight is maintained at a specific light intensity such as AM1.5G under irradiation. Of course, as those skilled in the art can easily deduce, since the light source 42 simulating sunlight is much bright...

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Abstract

The invention discloses a measurement method of series resistors inside a solar energy battery and a measurement system. Current is reversely input into the solar energy battery to replace a second light process of two light measurements commonly used. Because the light processes are reduced, on the one hand, reduction of consumed time and enhancement of measurement efficiency accord with market status that demand of the solar energy batteries surges, on the other hand, the service life of a light source is prolonged. Maintenance of light-emitting simplicity of the light source can ensure the precision the measurement, thereby the demand of maintenance is reduced, the operation cost is reduced, and the measurement of the solar energy battery is more effective.

Description

technical field [0001] The invention relates to a resistance measurement method, in particular to a measurement method and a measurement system for the internal series resistance of a solar cell. Background technique [0002] The main types of PN solar cells can be divided into single crystal silicon, polycrystalline silicon and amorphous silicon according to the silicon crystal (SiN) arrangement, and also include III-V solar cells such as gallium arsenide (GnAs), indium phosphide ( InP), indium gallium phosphide (InGaP), etc., II-VI groups such as cadmium telluride (CdTe), copper indium selenide (CuInSe 2 ), etc., the basic structure of these solar cells is to form a PN semiconductor diode in the form of a semiconductor, and one side receives light to generate photocurrent, and then generates electricity. In order to draw terminal current with electrodes at both ends, it is necessary to plate a layer of metal on the surface of the solar cell to form conductive electrodes. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/08G01R31/26H02S50/15
CPCY02E10/50
Inventor 王遵义李静粼
Owner CHROMA ELECTRONICS SHENZHEN
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