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Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

A metal-organic chemistry and vapor deposition technology, applied in chemical instruments and methods, from chemically reactive gases, electrical components, etc., can solve the problems of forming inner holes, buffer layers and window layers that cannot be uniform, and cannot form uniform junctions, etc.

Inactive Publication Date: 2010-01-20
IN SOLAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] However, the method of using multi-step process to form the final thin film suffers from long overall preparation time, non-uniform surface, and formation of internal pores during film formation.
Therefore, when a solar cell is fabricated from a CIGS film with an uneven surface, the buffer layer and window layer cannot be uniformly applied to the CIGS absorber layer, thereby failing to form a uniform junction.
In this case, a solar cell with high energy conversion efficiency cannot be prepared due to the occurrence of an internal short circuit

Method used

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  • Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process
  • Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process
  • Method for fabricating 1-3-6 2 compound thin film using single metal-organic chemical vapor deposition process

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Embodiment approach

[0060] like Figure 4 As shown, according to the second embodiment of the present invention, when using a single precursor containing Group III elements and Group VI elements, a precursor containing Group I metals, and a precursor containing Group VI elements or containing Group VI elements Gas formation of I-III-VI on the substrate by a one-step MOCVD process 2 In the process of the compound thin film, the group III' elements different from the group III elements are also supplied and deposited on the substrate, thereby forming I-III by one-step MOCVD process 1-x III' x -VI 2 compound film.

[0061] Here, the definition of the single precursor containing Group III elements and Group VI elements, the precursor containing Group I metals, and the precursor containing Group VI elements or the gas containing Group VI elements is the same as The above-mentioned first embodiment is the same. Therefore, a detailed explanation thereof is omitted.

[0062] The second embodiment d...

Embodiment 1

[0098] Prepare the low-pressure MOCVD system consisting of two bubblers and H for supplying selenium (Se) 2 Se gas supplier, the two bubblers respectively contain [Me 2 In(μ-SeMe)] 2 as indium-selenium (In-Se) single precursor and (hfac)Cu(DMB) as monovalent copper (Cu) precursor. CuInSe is produced by operating the bubbler and gas supply as follows 2 compound film.

[0099] At 450°C, the [Me 2 In(μ-SeMe)] 2 、H 2 Se gas and (hfac)Cu(DMB) were directed substantially simultaneously onto a soda glass substrate provided with molybdenum (Mo) electrodes to form CuInSe 2 compound film. with [Me 2 In(μ-SeMe)] 2 、H 2 Se and (hfac)Cu(DMB) sequentially, the precursor and gas are supplied substantially simultaneously.

Embodiment 2

[0101] Prepare the low-pressure MOCVD system consisting of three bubblers and H for supplying selenium (Se) 2 Se gas supplier, the three bubblers contain [Me 2 In(μ-SeMe)] 2 As indium-selenium (In-Se) single precursor, (hfac)Cu(DMB) as monovalent copper (Cu) precursor and TMGa((CH 3 ) 3 Ga) as a gallium (Ga) precursor. CuIn is produced by operating the bubbler and gas supply as follows: 1-x Ga x Se 2 compound film.

[0102] At 450°C, the [Me 2 In(μ-SeMe)] 2 、H 2 Se gas and (hfac)Cu(DMB) were introduced substantially simultaneously onto a soda glass substrate provided with molybdenum (Mo) electrodes, to which TMGa ((CH 3 ) 3 Ga), to form CuIn 1-x Ga x Se 2 compound film. with [Me 2 In(μ-SeMe)] 2 、H 2 Se, (hfac)Cu(DMB) and TMGa((CH 3 ) 3 Ga), the precursor and the gas are supplied substantially simultaneously.

[0103]

[0104] Prepare the low-pressure MOCVD system consisting of two bubblers and H for supplying selenium (Se) 2 Se gas supplier, the two bub...

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Abstract

Disclosed herein is a method for producing a 1-III-VI2 compound thin film on a substrate through a single Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein a Group III element and Group VI element-containing single precursor, a Group I metal-containing precursor, and a Group VI element-containing precursor or a Group VI element- containing gas are concurrently supplied to a substrate and subjected to MOCVD to form a I-III-VI2 compound thin film on the substrate. The method employs a single deposition process to form the thin film and is thus provides a more economical, simplified process as compared to conventional methods. In addition, the method is capable of producing a thin film with an even surface and few or no inner pores, and, advantageously, is thus useful as a light-absorbing layer for a solar cell.

Description

technical field [0001] The present invention relates to the preparation of I-III-VI by a one-step metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) process 2 Compound thin film (compound thinfilm) method. More specifically, the invention relates to the preparation of I-III-VI 2 A compound thin film method in which high-quality I-III-VI with a uniform surface can be formed on a substrate using a one-step MOCVD process 2 Compound film, and by shortening the manufacturing time, can improve the production efficiency. Background technique [0002] Generally, I-III-VI 2 Group compound semiconductors (group I: Ag, Cu; group III: Al, Ga, In; and group VI: S, Se, and Te) have a chalcopyrite structure at normal temperature and pressure. Since I-III-VI can be made by changing the constituent atoms 2 The properties of compound semiconductors undergo many changes, so I-III-VI 2 Compound semiconductors are widely used in a variety of applicatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC30B29/46H01L31/0322H01L21/02568H01L21/0262C30B25/02H01L21/02422Y02E10/541Y02P70/50H01L21/205H10K99/00
Inventor 崔寅焕
Owner IN SOLAR TECH