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Cu-ni-si-based alloy for electronic material

A technology of electronic materials and copper alloys, applied in conductive materials, conductive materials, metal/alloy conductors, etc., to achieve the effect of improving strength and conductivity

Active Publication Date: 2010-02-10
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Therefore, the means for solving the problems to be solved by the present invention cannot be easily conceived from these patent documents.

Method used

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  • Cu-ni-si-based alloy for electronic material
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Examples

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Embodiment

[0052] Specific examples of the present invention will be described below, but these examples are provided for further understanding of the present invention and its advantages, and are not intended to limit the invention.

[0053] The copper alloy used in the examples of the present invention has a composition in which Sn, Zn, Mg, Mn, Co, and Ag are appropriately added to copper alloys in which the contents of Ni, Si, and Cr are slightly changed as shown in Table 1. In addition, the copper alloys used in the comparative examples are Cu—Ni—Si alloys having parameters outside the range of the present invention.

[0054] Copper alloys having various compositions described in Table 1 were melted at a temperature of 1300° C. in a high-frequency melting furnace, and cast into ingots having a thickness of 30 mm. Then, after heating this ingot at a temperature of 1000° C., it was hot-rolled to a plate thickness of 10 mm, and then rapidly cooled. In order to remove scale on the surfa...

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Abstract

Disclosed is a Corson alloy having dramatically improved properties (e.g., high strength and high conductivity) which are achieved by allowing the effect of the addition of Cr to a Cu-Ni-Si-based alloy to exhibit more effectively. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 4.5 mass% of Ni, 0.50 to 1.2 mass% of Si, 0.0030 to 0.3 mass% of Cr (providedthat the weight-based ratio of Ni to Si (i.e., a Ni / Si ratio) by weight is as follows: 3 = Ni / Si = 5.5), with the remainder being Cu and unavoidable impurities. In the copper alloy, a Cr-Si compoundhaving a size of 0.1 to 5 ¢mu!m (inclusive) is dispersed in the material at a dispersion density of 1 10<6> particles / mm<2> or less, wherein the atom-based ratio of the concentration of Cr to that ofSi in the dispersed particle is 1 to 5.

Description

technical field [0001] The present invention relates to a precipitation-hardening copper alloy, in particular to a Cu-Ni-Si-Cr alloy suitable for various electronic device parts. Background technique [0002] Copper alloys for electronic materials used in various electronic device parts such as lead frames, connectors, pins, terminals, relays, and switches are required to achieve both high strength and high electrical conductivity (or thermal conductivity) as basic characteristics. ). In recent years, the high integration, miniaturization, and thinning of electronic components have rapidly progressed, and correspondingly, the level of requirements for copper alloys used in electronic device components has also increased. [0003] From the standpoint of high strength and high conductivity, in recent years, the use of precipitation-hardened copper alloys has been increasing as copper alloys for electronic materials, replacing solid-solution-strengthened copper alloys such as ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/06C22C9/00C22C9/02C22C9/04C22C9/05C22C9/10C22F1/08H01B1/02H01B5/02C22F1/00C22F1/02C22C9/01
CPCC22F1/02H01B1/026C22F1/00C22F1/08C22C9/06H01B1/02H01B5/02
Inventor 江良尚彦
Owner JX NIPPON MINING & METALS CORP
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