Photoetching method and system

A technology of photolithography and photolithography technology, which is applied in the direction of micro-lithography exposure equipment, photolithography exposure device, electrical components, etc. Whether the engraving result is abnormal or not, so as to improve the efficiency of lithography
CN101655666BActive Publication Date: 2011-07-20SEMICON MFG INT (SHANGHAI) CORP
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2011-07-20

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a photoetching method and a photoetching system to improve photoetching efficiency. The method comprises the following steps: judging whether photoetching process condition parameters are in a predetermined range; when the photoetching process condition parameters are in the predetermined range, performing photoetching; and when the photoetching process condition parametersare not in the predetermined range, prohibiting the photoetching. The system comprises a judging unit for judging whether the photoetching process condition parameters are in the predetermined range,a photoetching unit for performing the photoetching when the judging unit judges that the photoetching process condition parameters are in the predetermined range, and a photoetching prohibiting unitfor prohibiting the photoetching when the judging unit judges that the photoetching process condition parameters are not in the predetermined range.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the field of integrated circuit manufacturing, in particular to a photolithography method and system. Background technique

[0002] The integrated circuit manufacturing process includes processes such as photolithography. In lithography, photolithography is usually carried out on the lithography product according to the lithography process condition parameters, and the lithography process condition parameters can affect the lithography result. The lithography process parameters generally include: exposure energy (Energy), used to control the product feature size; focus plane (Focus), used to control the cross-sectional shape of the product feature size; alignment model parameters (OVL, Overlap), used to Control the degree of alignment between the product and the front layer; and the numerical aperture (NA, Numerical Aperture) of the exposure machine and the aperture factor (Sigma) of the exposure machine.

[0003] At present,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More