Photoetching method of superfine structure

Abstract

The invention provides a photoetching method of a superfine structure. The photoetching method comprises the steps that: a structure material layer and a first hard mask material layer are formed on a substrate; a first photoetching is carried out for forming a first hard mask pattern; a second hard mask material layer is formed on the first hard mask pattern; and a second photoetching is carriedout for forming a second hard mask pattern, wherein light sources of the first photoetching and the second photoetching are different and are selected from either an i line mercury arc lamp or an electron beam exposure system. According to the photoetching method of the superfine structure provided by the invention, the traditional optical photoetching technology and the electronic beam photoetching technology are combined for use, the electronic beam exposure is used for realizing the superfine pattern manufacture, and the optical photoetching is used for completing other patterns, so the manufacture problem of the superfine pattern can be effectively solved, and the efficiency is not reduced.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a microstructure hybrid photolithography method. Background technique [0002] With the development of very large scale integrated circuits for many years, the continuous reduction of circuit size has brought more and more challenges to process technology, especially photolithography technology. Based on efficiency considerations, the lithography technology currently used in mass production is mainly based on ultraviolet i-rays of different light source ranges (I-LINE, mercury arc lamps are used as light sources, and the emitted rays are i-lines with a wavelength of 365nm, which are in the ultraviolet band) And deep ultraviolet (DUV, usually using excimer laser as the light source, such as 248nm wavelength KrF excimer laser, 193nm ArF excimer laser) lithography technology, the immersion 193 lithography technology developed in recent years is the optical lithograp...

AI Technical Summary

Problems solved by technology

The electron beam lithography technology suitable for large-scale manufacturing of fine structures is usually a Gaussian scanning system with a resolution of several nanometers, but due to the need for fine line structures (such as gate structures with a width of Larger contact areas, source and drain areas, or layout routing areas) are scanned, and the main problem is low efficiency; the multi-beam electron beam exposure currently being developed has the problem of huge data volume, and it is difficult to be used on a large scale in the short term. manufacture

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