Large single crystal diamonds

A single crystal diamond and diamond technology, applied in the field of diamond material preparation, can solve the problems of high cost and complicated methods, and achieve the effect of improving spatial uniformity

Active Publication Date: 2010-02-24
ELEMENT SIX LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] Thus, although 4,836,881 addresses some of the problems encounte

Method used

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  • Large single crystal diamonds
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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0187] Example 1

[0188] A set of 40 seed crystals prepared from HPHT diamond was selected. The seed crystal has a polished upper (growth) surface (R of less than 100nm measured using a stylus profiler a ) And use the Nd:YAG laser for laser cutting from larger pieces. The seed crystal has a dimension of 5.0mm×0.58mm×0.58mm. The geometry of the seed crystal is: the growth surface is within 10° of (001) and the edge of the seed crystal is Within 10° of the direction.

[0189] Choose seed crystals according to the following criteria:

[0190] ●Inclusion content (there are no inclusions larger than 0.2mm in size, and the average length of the maximum edge is less than 1 inclusion per linear millimeter)

[0191] ●No cracks (observed under 10×)

[0192] ●Surface finish (R a <80nm)

[0193] ●>60% single sector growth habit

[0194] ●Dimension tolerance-all dimensions are within 0.1mm of the required size.

[0195] Use as Figure 1a The illustrated layout arranges the seeds on the seed suppo...

Example Embodiment

[0203] Example 2

[0204] A set of 59 seed crystals prepared from HPHT diamond was selected. The seed crystal has a polished upper (growth) surface (less than 100nm R measured with a stylus profiler a ) And use the Nd:YAG laser to laser cut from larger pieces. The seed crystal has a dimension of 3.5 mm×1.0 mm×1.0 mm. The geometry of the seed crystal is: the growth surface is within 10° of (001), and the edge of the seed crystal is Within 10° of the direction.

[0205] Choose seed crystals according to the following criteria:

[0206] ●Inclusion content (there are no inclusions larger than 0.2mm in size, and the average length of the maximum edge is less than 1 inclusion per linear millimeter)

[0207] ●No cracks (observed at 10× magnification)

[0208] ●Surface finish (R a <80nm)

[0209] ●>60% single sector growth habit

[0210] ●Dimension tolerance-all dimensions are within 0.1mm of the required size.

[0211] Use as Figure 1a The illustrated layout arranges the seeds on the seed s...

Example Embodiment

[0223] Example 3

[0224] A set of 34 seed crystals prepared from HPHT diamond was selected. The seed crystal has a polished upper (growth) surface (less than 100nm R measured with a stylus profiler a ) And use Nd:YAG laser for laser cutting from larger pieces. The seed crystal has a dimension of 7.0 mm×1.0 mm×1.0 mm. The geometry of the seed crystal is: the growth surface is within 10° of (001), and the edge of the seed crystal is Within 10° of the direction.

[0225] Choose seed crystals according to the following criteria:

[0226] ●Inclusion content (there are no inclusions larger than 0.2mm in size, and the average length of the maximum edge is less than 1 inclusion per linear millimeter)

[0227] ●No cracks (observed at 10× magnification)

[0228] ●Surface finish (R a <80nm)

[0229] ●>60% single sector growth habit

[0230] ●Dimension tolerance-all dimensions are within 0.1mm of the required size.

[0231] Use as Figure 1a The illustrated layout arranges the seeds on the seed ...

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Abstract

The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ration of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described, wherein the longest dimension of the growth surface substantially aligned along a <100> or <110> direction in the plane of the growth surface.

Description

technical field [0001] The present invention relates to a method of preparing diamond material. In particular, the invention relates to large single crystal diamonds and methods of making them using high pressure high temperature (HPHT) methods. Background technique [0002] The synthesis of diamond by the temperature gradient HPHT method is well known in the art. [0003] Conventional methods of diamond synthesis can produce single crystal diamonds up to several carats (maximum lateral dimension about 6 mm), although some exceptionally large diamonds are reported in R.C. Burns et al., Diamond and Related Materials, 8 (1999), 1433-1437 (stone), but is generally not available due to the added complexity in preparation. [0004] For a range of products from synthetic gem-quality diamonds to substrates for epitaxial growth, maximizing the overall volume fraction of each crystal available for the finished product is an important challenge in diamond synthesis. Furthermore, fo...

Claims

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Application Information

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IPC IPC(8): B01J3/06
CPCB01J2203/068B01J2203/0655B01J2203/062C30B25/18B01J3/062B01J2203/061Y10T428/24942Y10T428/30
Inventor C·N·多德格R·A·斯皮茨
Owner ELEMENT SIX LTD
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