Isolated gate bipolar transistor driving circuit

Abstract

The invention discloses an isolated gate bipolar transistor driving circuit comprising a transformer (1), and a primary side of the transformer (1) is used for receiving pulse width modulation signals. The invention is characterized by also comprising a charge-discharge module (2), wherein, a secondary side of the transformer (1) is used for connecting a gate pole of an isolated gate bipolar transistor, and is connected with the input end of the charge-discharge module (2); the output end of the charge-discharge module (2) is used for connecting with the gate pole of the isolated gate bipolartransistor; the charge-discharge module (2) is used for receiving the pulse width modulation signals output by the secondary side of the transformer (1), and charges or discharges to the isolated gatebipolar transistor according to the pulse width modulation signals to lead the isolated gate bipolar transistor to be precharged before power on and to be predischarged before power off. The drivingcircuit can effectively inhabit power on of instantaneous current di / dt and power off of instantaneous voltage dv / dt so as to achieve the purpose of reducing the electric stress of the isolated gate bipolar transistor.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor (IGBT) drive circuit. Background technique [0002] The current insulated gate bipolar transistor (hereinafter referred to as IGBT) drive circuit generally uses a pulse width modulation (PWM) signal to control the on and off of the IGBT. This drive circuit is currently divided into three types: optocoupler transmission isolation Drive circuit, this drive circuit is suitable for small-capacity inverters; pulse transformer transmission isolation drive circuit, this drive circuit is suitable for large-capacity inverters, and is widely used in large-capacity electric vehicles; there is also a fiber optic Transmission isolation drive circuit, this kind of drive circuit is better, but the cost is too high, so it is not commonly used in practical applications. [0003] In the pulse transformer transmission isolation drive circuit, due to the relatively large transmitted voltage, the instantaneous ...

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Problems solved by technology

[0002] The current insulated gate bipolar transistor (hereinafter referred to as IGBT) drive circuit generally uses a pulse width modulation (PWM) signal to control the on and off of the IGBT. This drive circuit is currently divided into three types: optocoupler transmission isolation Drive circuit, this drive circuit is suitable for small-capacity inverters; pulse transformer transmission isolation drive circuit, this drive circuit is suitable for large-capacity inverters, and is widely used in large-capacity electric vehicles; there is also a fiber optic Transmission isolation drive circuit, this drive circuit is better, but the cost is too high, not commonly used in practical applications

[0003] In the pulse transformer transmission isolation drive circuit, due to the relatively large transmitted voltage, the instantaneous current di / dt and the instantaneous voltage dv / dt when the IGBT is turned on each time will be very large, so that the electrical stress of the IGBT is also very large , will bring impact to IGBT and accelerate its loss

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