Resonance miniature electric field sensor

Abstract

The invention relates to a resonance miniature electric field sensor. The sensor comprises a substrate, an exciting electrode with a comb structure, a vibration sensitive electrode with a comb structure, a shielding electrode, an electric field inductive electrode, a crossbeam and a supporting beam, wherein the exciting electrode with the comb structure is fixed on one side of the substrate by ananchor point, while the vibration sensitive electrode with the comb structure is fixed on the other side of the substrate by an anchor point; the shielding electrode and the electric field inductive electrode are fixed on the area of the substrate in the middle of the exciting electrode and the vibration sensitive electrode; the shielding electrode and the electric field inductive electrode are alternately arranged; the crossbeam is positioned in the middle of the shielding electrode; one end of the supporting beam is fixed on the substrate by the anchor point, while the other end is connected with the exciting electrode and the vibration sensitive electrode. The resonance miniature electric field sensor can reduce the static exciting voltage of a device, improve the sensitivity and precision of the sensor, and further improve the environment interference resistance capability of the sensor.

Description

technical field [0001] The invention relates to an electric field sensor, in particular to a resonant miniature electric field sensor based on silicon-on-insulator (SOI) technology. Background technique [0002] The electric field sensor is a device for measuring electric field strength. It is widely used in many fields such as national defense, aerospace, weather detection, electric power, earthquake prediction, scientific research and industrial production, and plays a very important role. For example, with the help of electric field sensors to monitor changes in the ground and air atmospheric electric fields, accurate meteorological information can be obtained, thereby providing security for the launch of missiles, satellites and other aircraft into the sky; in the field of industrial production, using electrostatic field sensors to monitor The potential distribution and electric field distribution help us to take effective measures to prevent accidents in time; and by me...

AI Technical Summary

Problems solved by technology

The sensitive structure of the device is prepared by polysilicon technology, which mainly includes comb-tooth excitation structure, comb-tooth capacitance pickup structure, shielding electrode, sensing electrode and support beam. High sensitivity and precision can be obtained, but there is still a certain distance from the actual application requirements. In addition, the excitation voltage is large, and device adhesion is prone to occur, and the quality factor is not high and the signal-to-noise ratio is low.

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