Sintered silicon wafer
A technology of silicon wafers and wafers, applied in ion implantation plating, coating, transportation and packaging, etc., can solve the problems of poor mechanical strength and inability to manufacture large rectangular or disc-shaped targets
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Embodiment 1
[0037] The coarse silicon particles with a purity of 6N were pulverized by a jet mill to obtain silicon powder with an average particle size of 7 μm, and the obtained silicon powder was calcined under reduced pressure and heated to 1000°C for 5 hours to deoxidize it.
[0038] Next, set the temperature to 1200°C and set the surface pressure to 200kgf / cm 2 , hot-pressed, and then subjected to HIP at a temperature of 1200° C. and an additional pressure of 1400 atmospheres to obtain a silicon sintered body with a diameter of 400 mm.
[0039] The crystal grain size can be adjusted arbitrarily by selecting and using fine high-purity silicon, selecting firing (deoxidation) conditions, HIP temperature, and additional pressure. Furthermore, the silicon sintered body is ground into a silicon wafer.
[0040] The silicon sintered body wafer of Example 1 had an average crystal grain size of 7 μm and a maximum crystal grain size of 16 μm. The mechanical strength of this sintered silicon waf...
Embodiment 2-7
[0048] Fine silicon powder with a purity of 5N and 6N and an average particle size of 1 to 10 μm is roasted and deoxidized under reduced pressure in the same manner as in Example 1 in the range of 1100 to 1300 ° C, and then heated in the range of 1200 to 1420 ° C Inside, 200kgf / cm 2 Hot pressing is carried out under the above surface pressure, and the obtained silicon is further subjected to HIP treatment in the range of 1200 to 1420°C under the pressure of 1000 atmospheric pressure or more, thereby producing the largest particle size shown in Table 1. Sintered silicon having a crystal grain size in the range of 1 μm to 10 μm or less.
[0049] The results are also shown in Table 1. As shown in Table 1, the average bending strength is 21~33kgf / mm 2 , the average tensile strength is 12~17kgf / mm 2 , the average Vickers hardness is Hv830~Hv1120, and the average value of the bending strength measured by the three-point bending method is 20kgf / mm 2 Above, 50kgf / mm 2 Below, the ...
Embodiment 8-10
[0051] Next, based on Representative Example 1 of the present invention, when the surface of the silicon wafer was divided into arbitrarily many regions and the average particle diameter of each region was measured, the variation in the average particle diameter for each region was observed. The results are shown in Table 2.
[0052] It can be seen from this that the average flexural strength of sintered silicon wafers with a deviation of ±5 μm or less is 26 to 25 kgf / mm 2 , The average tensile strength is 13~14kgf / mm 2 , The average Vickers hardness is Hv970~Hv1000, the smaller the deviation is, the smaller the difference caused by the position is, and the mechanical properties are improved. Therefore, it can be seen that controlling the deviation to ±5 μm or less is more preferable from the viewpoint of stabilizing the mechanical properties of the silicon wafer and improving product quality.
[0053] However, it should be understood that as long as the maximum crystal grai...
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