Wafer/ribbon crystal method and apparatus
A ribbon and crystal technology, applied in the grain boundary field of the wafer, can solve the problem of reducing the electrical efficiency of the wafer
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[0021] In an exemplary embodiment, the wafer fabrication method removes the edges of the wire ribbon crystals, or removes the edges of wafers cut from the wire ribbon crystals, to substantially alleviate the aforementioned problems. Specifically, the method may also generally planarize the crystal / wafer edge and remove at least some of the smaller grains that act as electron traps, among other things. Thus, the resulting wafers 1) have improved electronic properties, 2) can be placed closer to adjacent wafers, and 3) maximize the area for back surface contact. Also, removal of the smaller grains should improve the aesthetic appearance to some observers. Details of exemplary embodiments are discussed below.
[0022] figure 1 A partial cross-sectional view of a silicon ribbon crystal growth furnace 10 in which an exemplary embodiment of the present invention may be practiced is schematically shown. The furnace 10 has, inter alia, a housing 12 forming a substantially oxygen-fr...
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