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Method for the production of a rigid power module

A technology of power modules and molds, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor/solid-state device components, etc., can solve the problems of reducing the rigidity of screw point modules and low contact pressure

Active Publication Date: 2012-08-08
DANFOSS SILICON POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] A missing substrate plate, or a missing base plate, reduces the rigidity of the module between the screw points, so the contact pressure is too low to spread the paste in a thin layer

Method used

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  • Method for the production of a rigid power module
  • Method for the production of a rigid power module
  • Method for the production of a rigid power module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Although the manufacturing steps in the state of the art described in the introductory section call for a double encapsulation technique (steps 2 and 4 in the table below), the transistor module according to the invention is encapsulated in one step, the lead frame and the semiconductor components in a rigid plastic molding material in the package.

[0052] In the prior art, the following steps had to be performed:

[0053] 1. Solder the semiconductor to the lead frame;

[0054] 2. Casting a frame around the lead frame to create an internal space for the internal wiring of the semiconductor;

[0055] 3. Fabricate all required bonding connections inside the module;

[0056] 4. Fill the inner space of the module with an always soft silicon block (soft gel) for electrical insulation and vibration damping.

[0057] For soft gels, the disadvantages of which have already been discussed in the background art, now result in an overall very rigid component whose thermal expan...

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Abstract

Disclosed is a method for producing a rigid power module, comprising the following steps: a monolithic lead frame is produced; said lead frame is equipped with semiconductor components and optional passive components, and corresponding connections are bonded; the equipped lead frame is introduced into a pressing tool such that the uncovered lead frame is accessible; the lead frame is fastened within the tool by means of a mounting die; and a duroplastic compression molding material is pressed into the tool so as to envelop the equipped lead frame. Said method is characterized in that cavitiesare left in predetermined positions in the envelope of the power module during the enveloping process. Furthermore, webs of the monolithic lead frame are cut out by means of punches that are introduced into the cavities such that electrically insulated islands of materials of the previously monolithic lead frame are created.

Description

technical field [0001] The invention relates to a method of manufacturing a rigid power module. Background technique [0002] Known embodiments of power modules include open power semiconductors that are soldered or glued directly to a metal lead frame. [0003] Typically, individual leadframes are secured by a plastic frame formed by transfer molding by inserting the leadframe components into a mold. Inside the injection frame the lead frame carries the components, and outside the frame the terminals of the lead frame components provide the electrical connection of the component group to other components. [0004] The leadframe parts of such power modules are distributed over several levels and must be electrically insulated from each other, which forces them to be manufactured in several parts. The interior of the low level is provided with semiconductors, and the opposite metal side of the lower lead frame faces the external cooling surface. Such modules do not include...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/495H01L21/56H01L21/48
CPCH01L23/49541H01L23/49575H01L2924/01019H01L24/49H01L2924/01068H01L2224/49175H01L23/4006H01L21/565H01L2924/13055H01L2924/00014H01L2924/15747H01L2924/181H01L2924/00H01L2224/45099H01L2224/45015H01L2924/207
Inventor H·乌尔里克T·森伊利茨R·艾塞尔
Owner DANFOSS SILICON POWER