Method for gate oxide integrity (GOI) test of MOS transistor devices

Abstract

The invention discloses a method for a gate oxide integrity (GOI) test of MOS transistor devices, which comprises the following steps of: providing a test power supply; respectively connecting a plurality of MOS transistor devices to be detected to the test power supply; detecting the leakage current of the MOS transistor devices at the moment; and when the leakage current suddenly varies, starting a detecting device and detecting failure points on the MOS transistor devices. By utilizing the method, when the gate oxide reliability test is carried out on the MOS transistor devices, particularly a time-dependent dielectric breakdown (TDDB) test, the service life of the devices to be detected can be estimated, and the concrete condition of the failure points on gate oxide of the MOS transistor devices to be detected can be synchronously and accurately reflected in time, thereby carrying out further failure analysis on the devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for testing the integrity (GOI) of a gate oxide layer of a MOS transistor device. Background technique [0002] The gate oxide layer in the MOS transistor is formed by oxidation of the silicon substrate at high temperature. This layer of SiO 2 membrane is a 10 15 An insulating film with a high resistivity of about Ω·cm will generate F-N (Flowler-Nordheim) type tunneling current when the applied electric field is greater than 6mV / cm. [0003] With the continuous development of technology, the thickness of the gate oxide layer of integrated circuits is also reduced from 20-30nm to less than 1nm. The gate oxide layer continues to develop towards the film direction, but the power supply voltage should not be lowered, under a higher electric field strength. It is bound to make the performance of the gate oxide layer a prominent issue. Poor electrical r...

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to solve the problem that in the prior art, when testing the gate oxide layer integrity (GOI) of MOS transistor devices and using parallel time-dependent dielectric breakdown (TDDB) testing, it is impossible to simultaneously and timely and accurately reflect the gate Specific conditions of the failure point on the extreme oxide layer, resulting in technical issues that require additional time or prevent further failure analysis of the device

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