Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Matted crystal for pulling silicon rod

A silicon rod drawing and sub-crystal technology, which is applied in the field of parts and components, can solve problems such as sub-crystals are easy to break, and achieve the effect of solving fracture, eliminating fracture factors, and synchronous rotation

Inactive Publication Date: 2010-06-16
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the defect that the existing subcrystals are easy to break during the drawing process, the subcrystal structure must be improved to solve the problem. The purpose of the present invention is to provide a subcrystal for silicon rod drawing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Matted crystal for pulling silicon rod
  • Matted crystal for pulling silicon rod
  • Matted crystal for pulling silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The specific implementation of the present invention will be described in detail below by taking the structure of the clamp part of the tetragonal subcrystal as an example.

[0016] as attached Figure 1 to Figure 4 Shown is the silicon rod drawing sub-crystal chuck part, which is composed of the present invention and the chuck 2. The present invention includes a connecting polygonal platform 11 and a lifting rod 12 whose cross-sectional shape is a square, and connects the upper table surface of the polygonal platform 11. 13 is larger than the lower table surface 14, and the lifting rod 12 is arranged on the lower end surface of the lower table surface 14. The chuck 2 includes a threaded hole 21, a polygonal platform hole 22 and a guide hole 23. The three are coaxial hole systems, and the polygonal platform hole 22 The cross-sectional shape of the truss is a quadrangular truss, and the taper angle of the truncated polygonal hole 22 is 120°; the shape and the taper angle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a matted crystal for pulling a silicon rod, which is provided with a connecting polygon stand and a lifting pole, wherein the upper stand surface of the connecting polygon stand is larger than the lower stand surface; the lifting pole is arranged on the lower end surface of the lower stand surface; a polygon stand hole is arranged on a clamping head; and the connecting polygon stand of the matted crystal is nested in the polygon stand hole of the clamping head. Torque transfer and axial tension bearing between the matted crystal and the clamping head are realized through the shaft-hole fit connecting structure of the polygon stand, thus a gap ground on the matted crystal wall is not needed, and a fixing pin is not needed for connection; the cross sectional area of the lifting pole on the matted crystal can not be reduced, thereby eliminating the factors of rupture of the matted crystal in the pulling process on structure; and the invention solves the problem of rupture of the matted crystal and can realize synchronous rotation of the matted crystal and the clamping head of the matted crystal.

Description

Technical field: [0001] The invention relates to parts of a monocrystalline silicon or polycrystalline silicon rod drawing furnace, in particular to a daughter crystal chuck part in a single crystal silicon drawing furnace. Background technique: [0002] Monocrystalline silicon and polycrystalline silicon have been widely used in the semiconductor and solar cell industries, and the Czochralski method for preparing silicon rods is the most commonly used method in the field of silicon rod manufacturing. In the crystal pulling furnace, after the silicon material is melted at high temperature, the silicon ingot is rotated out through the sub-crystal chuck part. The lower end is bonded to the upper end of the high-temperature molten ingot. At present, the commonly used seed crystal is cylindrical single crystal silicon. In order to connect the cylindrical seed crystal to the chuck, a After the seed crystal is put into the fixing hole of the chuck, the seed crystal is fixed on th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/36
Inventor 蒋新民
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com