The invention provides a TM021
modal high-power
microwave plasma diamond film deposition device. The TM021
modal high-power
microwave plasma diamond film deposition device comprises an upper cylinder, a lower cylinder, an adjustable upper cavity, a
microwave reflecting plate, a deposition table, a microwave coaxial excitation port, a microwave
quartz port, a gas inlet, a gas outlet, a temperature measuring hole, an observing window and the like. The TM021
modal high-power microwave
plasma diamond film deposition device has TM021 modal
electric field distribution and the characteristics of centralized
electric field distribution in a microwave
resonator and stable excited plasma locations. The distribution of plasmas in the device can be optimized in real time through a regulating mechanism of the device. An annular microwave
quartz window placed below the deposition table can be prevented from being excessively heated, polluted and etched by the plasmas. The inner wall of a
resonant cavity is far away from a high-temperature
plasma zone, so that the
thermal radiation on the inner wall of the cavity is weakened, and
foreign matter deposition is avoided. Each main part of the device can be directly water-cooled. Due to the advantages, the device can be applied to the input of relatively high-power microwaves, and the high-efficiency deposition of large-area high-quality diamond films is realized.