Charge pump

Abstract

The invention discloses a charge pump, comprising a first booster circuit for boosting the power supply voltage, and an output MOS tube coupled to the first booster circuit. The output MOS tube comprises a first input end, a first output end, a substrate end and a first control end, wherein the voltage of the substrate end is the higher voltage of the first input end or the first output end; the control end receives the control signal; the first input end is connected with the output of the first booster circuit, and the first output end is used as the output of the charge pump. The charge pump can improve the bulk effect and the electric current leakage.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a charge pump. Background technique [0002] In current applications of non-volatile memories, high voltages are usually applied. These high voltages are typically provided by charge pumps. [0003] Figure 1a It is a partial circuit schematic diagram of a current charge pump. refer to Figure 1a As shown, the circuit includes a PMOS transistor M1 and a capacitor C1 connected to the source (s) of the PMOS transistor, and the source of the PMOS transistor is used as the output (out) of the charge pump. By controlling the gate voltage of the PMOS transistor M1 to turn it on, so that the current at the drain (d) is transmitted to the capacitor C1 to charge the capacitor C1. Through charging, the charge on the capacitor C1 gradually accumulates, so that the source voltage of the PMOS transistor M1 increases. However, when the source voltage of the PMOS transistor M1 rises...

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Problems solved by technology

Therefore, it will also affect the efficiency of the charge pump

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