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Flash memory and method for operating data in flash memory

A technology of data operation and flash memory, which is applied in the field of data operation in flash memory and Flash, can solve problems such as damage to the reference unit 11, reduce the reliability and service life of the Flash, and reduce the service life of the reference unit 11, so as to improve reliability and reliability The effect of performance and service life

Inactive Publication Date: 2010-07-14
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, with the current increase in the frequency of data operations, the frequency of use of the reference unit 11 is also greatly increased, so it is easy to cause damage to the reference unit 11 and reduce the service life of the reference unit 11. Once the reference unit 11 is damaged, it cannot be used. The data operation of the storage block 10 will easily reduce the reliability and service life of the Flash, as well as the reliability of the data operation in the Flash.

Method used

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  • Flash memory and method for operating data in flash memory
  • Flash memory and method for operating data in flash memory
  • Flash memory and method for operating data in flash memory

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Embodiment Construction

[0013] For the problems mentioned in the background technology, the embodiment of the present invention proposes that if a standby reference unit is set in the Flash, and when the reference unit fails to work normally, the standby reference unit takes over the work of the reference unit, then the above problems can be avoided and the performance of the Flash can be improved. reliability and service life.

[0014] figure 2 It is a schematic diagram of the partial structure of the Flash proposed by the embodiment of the present invention. In combination with this figure, based on the above ideas, the Flash proposed by the embodiment of the present invention includes:

[0015] Storage block 20, reference unit 21 and comparison unit 22, described reference unit 21 and storage block 20 are all connected to comparison unit 22, are used to output reference signal and data signal to comparison unit 22 respectively; Comparison unit 22 is used for comparing described Reference signal ...

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Abstract

The invention provides a flash memory and a method for operating data in the flash memory so as to improve the reliability and prolong service life of the flash memory and improve the reliability of data operation in the flash memory. The flash memory comprises a memory block, a reference unit, a comparison unit, a monitoring unit, a control unit, a spare reference unit and a spare comparison unit, wherein the monitoring unit is used for monitoring whether the reference unit is working normally and informing the control unit when the reference unit cannot work normally; the control unit is used for controlling the spare reference unit to output a reference signal to the spare comparison unit; the spare reference unit is used for outputting the reference signal to the spare comparison unit; and the spare comparison unit is used for comparing the signals transmitted by a storage unit and the spare reference unit and outputting the comparison result.

Description

technical field [0001] The invention relates to the semiconductor field, in particular to a flash memory (Falsh) and a data operation method in the Flash. Background technique [0002] figure 1 It is a partial structure diagram of the existing Flash, and the number 10 in the figure represents a storage block, which is used to store data and can output data current I cell ; Label 11 represents the reference unit, which can output the reference current I ref ; Label 12 is a comparison unit for comparing the data current I cell and reference current I ref , and output a logic comparison result of “0” or “1” to assist in implementing data operations such as data reading, writing, and erasing on the storage block 10 . [0003] According to the existing data operation scheme, each time data operation is performed on the memory block 10, the reference unit 11 is required to output the reference current I ref , are compared by the comparison unit 12. [0004] However, with the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06
Inventor 苗丽常建光
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP