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Programming method of non volatile memory device

A non-volatile storage and device technology, applied in the field of programming non-volatile storage devices, can solve problems such as increasing the number of pulses

Inactive Publication Date: 2010-07-21
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is because, at lower programmed start voltages, the number of pulses to be applied increases

Method used

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  • Programming method of non volatile memory device
  • Programming method of non volatile memory device
  • Programming method of non volatile memory device

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Embodiment Construction

[0017] Hereinafter, the present disclosure will be described in detail in conjunction with one or more embodiments with reference to the accompanying drawings. The figures are provided to enable those of ordinary skill in the art to understand the scope of one or more embodiments of the present disclosure.

[0018] figure 1 is a diagram showing the overall configuration of a nonvolatile memory device according to an exemplary embodiment.

[0019] The non-volatile storage device 100 includes a memory cell array 102, a page buffer 108, an X decoder 104 and a Y decoder 106, a high voltage generator 110, a command interface logic unit 112, a command register 114, an address register / counter 116, A data register 118 and an IO cache unit 120 . The operation of the nonvolatile memory device is described below.

[0020] First, when the chip select enable signal / CE of the command interface logic unit 112 is disabled and the write enable signal / WE is triggered, the command interface ...

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Abstract

According to a method of programming a nonvolatile memory device, a program operation is performed on a first page by applying a program pulse to the first page. A verification operation is performed on the program operation by applying a verification voltage to the first page. If the program operation for the first page has not been completed, a voltage selected from threshold voltages of the first page is set as a highest threshold voltage. The program operation for the first page is completed by repeatedly performing a program operation and a verification operation on the first page while a voltage level of the program pulse is increased. The sum of a program start voltage for the first page and a difference between the verification voltage and the highest threshold voltage is set as a program start voltage for a second page.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2009-0005071 filed on January 21, 2009, the entire disclosure of which is hereby incorporated by reference. technical field [0003] One or more embodiments relate to a method of programming a non-volatile memory device. Background technique [0004] Recently, there has been an increasing demand for nonvolatile memory devices that can be electrically programmed and electrically erased, and that do not require a refresh function of rewriting data for a certain period of time. [0005] The nonvolatile memory cell enables an electrical program / erase operation by changing a threshold voltage when electrons migrate by a relatively strong electric field applied to a thin oxide layer, and performs a program operation and an erase operation. [0006] A nonvolatile memory device generally includes: a memory cell array, in which cells for storing data are ar...

Claims

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Application Information

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IPC IPC(8): G11C16/06G11C16/10G06F12/00
CPCG11C16/3436G11C11/5628G11C16/0483G11C16/12G11C16/14G11C16/3459
Inventor 金志桓朴成济
Owner SK HYNIX INC
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