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Method for forming projection electrode and substituted gold plating solution

A protruding electrode, gold plating solution technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., to achieve the effects of excellent bonding characteristics, reduced manufacturing costs, and easy formation

Inactive Publication Date: 2010-08-11
SHARP KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, the price of precious metals has continued to rise in recent years

Method used

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  • Method for forming projection electrode and substituted gold plating solution
  • Method for forming projection electrode and substituted gold plating solution
  • Method for forming projection electrode and substituted gold plating solution

Examples

Experimental program
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Effect test

Embodiment 1

[0098] In Example 1, the bumps were formed as described above. In the coating process, as shown in the above-mentioned Table 1, a film containing 1.5 g / L of sodium gold sulfite (amount of gold) and 30 g / L of disodium edetate was used. L, ethylenediamine 2g / L, polyethyleneimine 2mg / L, and potassium sulfite 200mg / L replacement gold plating solution.

[0099] The film thickness of the gold film formed on the obtained bump was 0.30 μm as shown in Table 3 above, and a sufficiently thick gold film was obtained. The appearance of the gold film is good, it is lemon yellow. The bonding properties were good, and the properties required as an electrode were sufficiently obtained.

[0100] It should be noted that the gold film in Example 1 is very dense and has a high uniformity of thickness. The replacement gold plating solution in Example 1 can prove that a gold film with a thickness of about 0.3 μm can be sufficiently formed only by this plating solution.

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Abstract

The invention provides a method for forming a projection electrode simplified with low cost and a substituted gold plating solution using the same. The invention relates to a method for forming a bump (2), comprising a covering working procedure of covering the substituted gold plating solution containing potassium sulfite and derivatives thereof on the surface of a conductive core (21) formed onthe electrode (12); in one covering working procedure, a golden film (22) with the thickness of 0.1 to 0.5 microns is formed on the surface of the core (21). Therefore, repeated covering treatment isunnecessary in order to form the golden film (22) for forming.

Description

【Technical field】 [0001] The present invention relates to a method of forming protruding electrodes serving as connection terminals in semiconductor devices and a replacement gold plating solution. 【Background technique】 [0002] Since the size of transistors and wires of the semiconductor device is reduced, the integration degree per unit area is high, and the manufacturing cost will be reduced. On the other hand, the functions of semiconductor devices are increasing in size and diversification. In the manufacturing cost of semiconductor devices, although the cost in the process of manufacturing semiconductor chips (hereinafter referred to as the first half of the process) is greatly reduced, the process of packaging and mounting electronic circuit boards (hereinafter referred to as the second half of the process) in order to complete them as electronic components The cost in the process) has not been reduced much. The cost in the second half of the process tends to occup...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48C25D3/48
CPCH01L24/11H01L2224/11H01L2924/15788H01L2924/00H01L2924/00012C23C18/42
Inventor 泽井敬一吾乡富士夫小田肇户塚崇志葛岛俊夫
Owner SHARP KK