Metal bonded light emitting diode and method of forming metal bonded light emitting diode

Abstract

The invention provides a metal-bonded light-emitting diode, which includes a substrate, a first bonding metal layer, a second bonding metal layer, a conductive oxide layer and an epitaxial layer. The first bonding metal layer is formed on the substrate. The second bonding metal layer is formed on the first bonding metal layer. A conductive oxide layer is formed on the second bonding metal layer. An epitaxial layer is formed on the conductive oxide layer. The present invention further includes a method for forming a metal-bonded light-emitting diode, comprising the following steps: disposing a first substrate; forming a first bonding metal layer on the first substrate; disposing a second substrate; forming an epitaxial layer on the second substrate; forming a conductive oxide layer on the epitaxial layer; forming a second bonding metal layer on the conductive oxide layer; bonding the first bonding metal layer and the second bonding metal layer; and removing the second substrate.

Description

technical field [0001] The invention belongs to a light-emitting diode, in particular to a metal-bonded light-emitting diode and a method for forming a metal-bonded light-emitting diode. Background technique [0002] Light emitting diodes are widely used products at present, and can be applied in various technical fields. However, in the technical field of light-emitting diodes, one of the most important issues at present is how to increase the brightness of the light-emitting diodes while reducing the manufacturing cost of the light-emitting diodes. [0003] As mentioned above, among the current technologies for improving the brightness of LEDs, one of them is to use metals as semiconductor materials for bonding to form LEDs. see Figure 1A and Figure 1B , which is a structure diagram of a light-emitting diode formed by utilizing metal bonding in the prior art. Further, the method of using metal as a bonding semiconductor material for forming a light-emitting diode is t...

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Problems solved by technology

[0004] However, due to the above-mentioned method of using metal as the semiconductor material for bonding to form the light-emitting diode 1, it only uses a single metal material as the material of the bonding layer 14, and does not consider the characteristics and costs of various materials in the selection of materials. The problem of high and low, thus causing many problems in the use of material bonding

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