Production method of silicon-substrate X-ray phase grating and production device thereof
A technology of phase grating and manufacturing method, applied in the direction of diffraction grating, material analysis using radiation, etc., to achieve the effect of easy realization, directional etching, and simple and reliable device
Inactive Publication Date: 2010-08-25
SHENZHEN UNIV
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[0008] The purpose of the present invention is to provide a method and device for manufacturing a large-area X-ray phase grating to solve the industry's demand for a large-area X-ray phase grating
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Embodiment 1
[0028] Example 1, such as Figure 4 As shown, a silicon-based X-ray phase grating manufacturing method, the grating material is double-sided polished N-type single crystal silicon wafer, here the silicon wafer is single crystal silicon, there are crystal orientations, (100), (111) and so on is the most commonly used one. Different crystal orientations have different etching rates. This implementation includes the following steps:
[0029] Step 1, using silicon semiconductor technology to fabricate a channel array with a "V" cross section on the etched surface of the silicon wafer;
[0030] Step 2, making a light-transmitting conductive layer on the other side of the silicon wafer;
[0031] Step 3. Etching the "V"-shaped channel array into a silicon-based X-ray phase grating by using a photo-assisted electrochemical etching method.
[0032] The core of the X-ray phase grating manufacturing method provided in this embodiment is the photo-assisted electrochemical etching metho...
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Abstract
The invention provides a production method of silicon-substrate X-ray phase grating and a production device thereof. The grating material adopts an N-shaped (100) silicon sheet with two-sides being polished, a V-shaped channel is etched in a fixed direction, a transmission conductive layer is produced on the back part of the silicon sheet and the back part of the silicon sheet is undertaken the photochemical electrolytic etching by producing an etching mask, and finally an X-ray phase grating which satisfies the requirement is formed. The invention also provides a special device for performing photochemical electrolytic etching on the silicon sheet. By adjusting the static work point of the electrolytic etching, i.e. the current and the voltage value, the work point is fixed in the etching area on a current-voltage curve, and then by adjusting the current of the light source, the radiation brightness of the light source is changed, so cavity can be controlled, and the orientation etching can be realized. The method is reliable and easy, and the device is simple and has good stability.
Description
technical field [0001] The invention relates to a method and device for manufacturing a phase grating for grating-based hard X-ray phase contrast imaging. Apparatus for wet etching fabrication method. Background technique [0002] Conventional X-ray imaging technology uses the difference in the absorption of X-rays by the imaged object to form image contrast. But for most of the imaging in the field of medical diagnosis, the objects to be imaged are mostly composed of components with little difference in absorption, so their clear image contrast cannot be obtained with conventional absorption imaging techniques. These components, which have little difference in absorption of X-rays, can cause large changes in the phase of X-rays. If the phase change of X-ray is detected, a clear image can be obtained, which is convenient for medical diagnosis. This is phase contrast imaging of X-rays. X-ray phase contrast imaging gives phase information, therefore, it has higher requirem...
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IPC IPC(8): G02B5/18G01N23/04
Inventor 郭金川周彬牛憨笨许桂雯赵志刚雷耀虎罗建东
Owner SHENZHEN UNIV