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Electric field auxiliary magnetic memory device and manufacture method thereof

A magnetic storage device, electric field-assisted technology, applied in information storage, recording information storage, instruments, etc., can solve problems such as technical difficulties, increase device energy consumption, etc., to reduce energy consumption, reduce writing magnetic field, and improve safety performance. Effect

Active Publication Date: 2012-03-14
TSINGHUA UNIV
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AI Technical Summary

Problems solved by technology

For the safety of data recording, people hope to develop materials with larger magnetic coercive field Hc in magnetic storage devices as storage media. Correspondingly, it is necessary to provide a larger write magnetic field, but the generated write magnetic field The larger the , the more difficult it will be technically, and it will greatly increase the energy consumption of the device

Method used

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  • Electric field auxiliary magnetic memory device and manufacture method thereof
  • Electric field auxiliary magnetic memory device and manufacture method thereof
  • Electric field auxiliary magnetic memory device and manufacture method thereof

Examples

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Effect test

example 1

[0046] Deposit strontium ruthenate (SRO) with a thickness of 100 nm on strontium titanate (STO) as the bottom electrode layer 3 by physical vapor deposition, followed by depositing 200 nm of barium titanate (BTO) as the ferroelectric oxide layer by the same method 4. Deposit a 10nm Fe / Ni-based alloy thin film on the ferroelectric oxide layer 4 as the magnetic recording layer 5 by using the magnetron sputtering method, and there is a very thin oxide layer as the protective layer 6 on the layer. A DC operating voltage from 0 to 20V is applied between the strontium ruthenate (SRO) bottom electrode layer 3 and the magnetic recording layer 5 to form an operating electric field applied to the ferroelectric oxide layer 4 . The attenuation characteristic of the magnetic coercive field of the magnetic recording layer 5 with the increase of the voltage applied to the ferroelectric oxide layer 4 was studied by using the magneto-optical Kerr effect test system. Define the example sample w...

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Abstract

The invention provides an electric field auxiliary magnetic memory device with a multi-layer composite film structure, which comprises a bottom electrode layer, a ferroelectric oxide layer, a magnetic recording layer, a protection layer and an operating voltage generating device. The operating voltage generating device applies an electric field to the ferroelectric oxide layer by the bottom electrode layer and the magnetic recording layer during writing. In addition, the invention also provides a manufacture method of the electric field auxiliary magnetic memory device. The device and the method are adopted to decrease the size of a magnetic coercivity field by utilizing the applied electric field during writing so as to be convenient to write, ensure the data safety and decrease the energy consumption.

Description

technical field [0001] The invention relates to the technical field of computer storage, in particular to an electric field assisted magnetic storage device, a manufacturing method for manufacturing the storage device and a perpendicular magnetic recording device with the storage device. Background technique [0002] Since the end of the 19th century, the magnetic information storage system has had a development history of more than one hundred years, and the computer hard disk system has been developed by the American IBM Corporation since the 1950s, and it has been more than 50 years. Hard disk is currently the information storage device with the largest capacity. The basic principle of the magnetic storage device is to record information in the magnetic recording medium in binary form, and use different orientations of the magnetic domains in the magnetic recording medium to correspond to 0-1 signals. Hard disk magnetic storage devices are indispensable components in tod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/66
Inventor 李峥南策文张毅林元华
Owner TSINGHUA UNIV
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