Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for converting GDSII file into maskless photoetching machine exposure data

A technology of maskless lithography and exposure data, which is used in electrical digital data processing, special data processing applications, instruments, etc., and can solve problems such as inaccurate lithography

Inactive Publication Date: 2010-09-08
HEFEI ADVANTOOLS SEMICON
View PDF2 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for converting GDSII files into exposure data of a maskless lithography machine to solve the problem of inaccurate lithography due to the traditional GDSII pattern accuracy being much greater than the exposure accuracy of a maskless lithography system. The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for converting GDSII file into maskless photoetching machine exposure data
  • Method for converting GDSII file into maskless photoetching machine exposure data
  • Method for converting GDSII file into maskless photoetching machine exposure data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Such as figure 1 As shown, each Layer (layer) contains some vector graphics. Since the graphic precision defined in the original GDSII file is usually much greater than the required exposure precision, these vector graphics must first be reduced by a certain factor to reduce the resolution. All vector graphics that appear in GDSII graphics are then converted to polygons for easy algorithmic processing.

[0030] Since the size of the bitmap file received by the spatial pattern generator (SLM) of the maskless lithography machine is determined (for example, 800×600, 1024×768, 1400×1200), and the graphic size of each layer is very large, Therefore, each Layer needs to be cut into a series of smaller exposure areas. The cut GDSII file structure is as follows figure 2 shown.

[0031] Next, it is necessary to determine which polygons are included in each exposure area, and the present invention uses a quad graph search tree to quickly determine whether a polygon intersects...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for converting a GDSII file into maskless photoetching machine exposure data. Vector graphics in GDSII are uniformly converted into polygons and large graphics at each layer are decomposed into a series of exposure areas. The polygons in the exposure areas are decomposed into rectangles by using a quadtree graphic partition method and then the graphics in one exposure area are stored into a plurality of bitmap files. Thereby, with the help of the high precision of a photoetching machine platform, the effect of exposing low-resolution bitmaps into high-resolution graphics is realized.

Description

technical field [0001] The invention relates to the technical fields of image processing and lithography, in particular to a method for converting GDSII files into exposure data of a maskless lithography machine. Background technique [0002] Photolithography is used to print patterns with certain features on the surface of a substrate. Such substrates can be used as substrates for manufacturing semiconductor devices, various integrated circuits, flat displays (such as liquid crystal displays), circuit boards, biochips, micromechanical electronic chips, optoelectronic circuit chips, and the like. Often used substrates are semiconductor wafers or glass substrates coated with light-sensitive media. [0003] During lithography, a wafer is placed on a wafer stage, and a pattern of features is projected onto the wafer surface by an exposure device within the lithography apparatus. Traditional step-and-repeat or step-and-scan lithography tools used in the semiconductor industry ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 蒋兴华李辉李显杰
Owner HEFEI ADVANTOOLS SEMICON