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WOx-based resistance type memory and preparation method thereof

A resistance memory and resistance type technology, applied in the field of microelectronics, can solve the problems of poor controllability of WOx and insufficient low resistance state, and achieve the effects of improved reliability, low power consumption, and good process controllability

Inactive Publication Date: 2010-09-08
FUDAN UNIV
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  • Abstract
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Problems solved by technology

[0008] The technical problem to be solved by the present invention is: in order to avoid the problems of poor process controllability and insufficient low-resistance state of WOx formed by direct oxidation on tungsten, provide a resistive memory of WOx-based storage medium and its manufacturing method

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  • WOx-based resistance type memory and preparation method thereof
  • WOx-based resistance type memory and preparation method thereof
  • WOx-based resistance type memory and preparation method thereof

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Embodiment Construction

[0042] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0043]The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repres...

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Abstract

The invention belongs to the technical field of microelectronics and relates to a metal oxide non-volatile memory technique, in particular to a WOx-based resistance type memory and a preparation method thereof. The WOx-based resistance type memory comprises an upper electrode, a tungsten lower electrode and a WOx-based memory medium which is arranged between the upper electrode and the tungsten lower electrode; the WOx-based memory medium is formed by performing oxidation treatment on a WSI compound covered on the tungsten lower electrode; and x is more than 1 and less than or equal to 3. Theresistance type memory has the characteristics of improving the controllability of the process and the reliability of devices, along with relatively low power consumption and high data retention performance.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, in particular to metal oxide non-volatile memory technology, in particular to a resistance type memory including a WOx-based storage medium and a manufacturing method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive switching memory (resistive switching memory) has attracted high attention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24H01L21/82
Inventor 林殷茵周鹏吕杭炳
Owner FUDAN UNIV
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