Semiconductor chip of integrated passive element and power amplifier element

Abstract

The invention discloses a semiconductor chip of an integrated passive element. The semiconductor chip comprises a high resistance substrate, an insulation layer and a metal layer; the upper surface of the semiconductor chip is provided with at least one bonding region group containing two lines of bonding regions on the left and right which are arranged regularly, the two bonding regions in the same row of one bonding region group are connected linearly through the traces of the metal layer, the bonding regions in the first line are separately connected with the bonding regions of the adjacent second line through the embowed and three-dimensional bonding lines which are arranged above the base plate in the same direction so that all the bonding regions of the two lines are penetrated by aspiral loop composed of the traces of the metal layer and the three-dimensional bonding lines, and the two ends of the loop are led out to form an inductor. The invention also discloses a power amplifier element of which electrical inductance is realized by the semiconductor chip of the integrated passive element. By using the semiconductor chip of the invention, the integration of the output impedance match circuit of the power amplifier can be realized and the number of the pin pads in the power amplifier module package can be reduced, thus reducing the package size of the radio frequency power amplifier module and lowering the cost of the product.

Description

technical field [0001] The invention relates to a semiconductor chip, in particular to a semiconductor chip integrating passive devices. The invention also relates to a power amplifier device. Background technique [0002] The implementation of radio frequency electronic circuits uses a large number of passive components, many of which are used in handheld wireless communication equipment. In the development process of radio frequency technology, integrating these passive devices and passive device circuits to reduce the module size and improve the performance of handheld wireless communication equipment has become the focus of development. The RF power amplifier module in the handheld wireless communication equipment uses some passive components to form a passive component circuit with certain functions, such as impedance matching circuit, filter circuit and switch circuit. The impedance matching circuit in the traditional RF power amplifier module is generally implemente...

AI Technical Summary

Problems solved by technology

The impedance matching circuit in the traditional RF power amplifier module is generally implemented in off-chip discrete components, and the realization of the filter circuit must also be considered. The use of SMT (Surface Mount Technology) for these off-chip discrete components will inevitably increase the pin soldering of the module. The number of disks leads to an excessively large module package size and an increase in product cost

Images