Structure for testing integrality of gate oxide of semiconductor part
A technology of gate oxide layer and test structure, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as device failure, and achieve the effect of avoiding negative effects
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[0023] Wherein the gate structure includes: a gate and a gate oxide layer. The gate is polysilicon or metal gate. The gate oxide layer is an oxide layer, a nitride layer or a high dielectric constant material layer.
[0024] See Figure 3A , 3B, these two figures are a schematic diagram of the test structure of the integrity of the gate oxide layer of the semiconductor device with the shallow trench isolation structure provided by an embodiment of the present invention, wherein Figure 3A The part of the shallow trench isolation parallel to the gate structure is located under the gate structure, and the part perpendicular to the gate structure is sparse, that is, the spacing is relatively large, and there is no mutual force. Figure 3B The part of the shallow trench isolation parallel to the gate structure is located between the gate structures, and the part perpendicular to the gate structure is also sparse.
[0025] When the gate structures 330, 330' disposed in the activ...
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