Silicon wafer with test pads and testing method thereof

Abstract

The invention relates to a silicon wafer with a testing weld pad and a testing method thereof. The silicon wafer comprises a silicon base material, an insulating layer, at least one testing weld pad and a dielectric layer, wherein the testing weld pad comprises a first metal layer, a second metal layer and at least one first inner connecting metal, wherein the first metal layer is positioned on the insulating layer and is provided with a first block and a second block; the first block and the second block are mutually electrically independent; the second metal layer is positioned above the first metal layer; and the first inner connecting metal is connected with the second block of the first metal layer and the second metal layer. Thus, when a through hole and a crystal seed layer are formed in a sequential process, whether the crystal seed layer contacts with the second block of the first metal layer of the testing weld pad or not is known trough a test, and then whether the through hole is qualified or not is known, therefore the qualification rate in the sequential process is enhanced.

Description

technical field [0001] The present invention relates to a silicon wafer and a testing method thereof, in particular, to a silicon wafer with testing pads and a testing method thereof. Background technique [0002] Referring to FIG. 1 , a schematic cross-sectional view of a first known silicon wafer is shown. The silicon wafer 1 includes a silicon substrate 11 , an insulating layer 12 , a bonding pad 13 and a dielectric layer 14 . The insulating layer 12 is located on the silicon substrate 11 . The pad 13 is located on the insulating layer 12 . The dielectric layer 14 is located on the insulating layer 12 , covers the pad 13 , and exposes a surface 131 of the pad 13 . [0003] The disadvantages of this known silicon wafer 1 are as follows. When it is desired to form a through hole 19 below the pad 13, the silicon substrate 11 must be etched first to form a through hole 15. However, during the formation of the through hole 15, the etching rate at the center is greater than...

AI Technical Summary

Problems solved by technology

However, in the known technology, slicing must be done after the formation of the trenches 18 to observe its cross-sectional structure, so as to know whether the trenches 18 really penetrate the silicon substrate 11, resulting in increased manufacturing costs.

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