Dry etching method

Abstract

The invention relates to a dry etching method comprising the step of sequentially carrying out primary etching and over etching to a material layer to be etched, wherein etching gas adopted during the over etching at least comprises gas for increasing the generation quantity of a polymer in etching reaction. The dry etching method is beneficial to reducing the damage of the etching as to non-etching materials, thereby reducing particle residuals generated by the damage. Correspondingly, due to the reduction of the particle residuals, the cleaning time after dry etching can be shortened, thereby the damage of a cleaning solution to the formed device structure is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a dry etching method. Background technique [0002] The cleaning process after dry etching is a very important step in the semiconductor manufacturing process. In this cleaning process, the cleaning solution must be able to effectively remove residues (such as photoresist particles or other particles generated by etching), and must not damage the formed device structures, such as aluminum wires, via holes, and dielectrics. layers etc. [0003] The traditional cleaning process after dry etching mostly uses an organic solvent mixture containing hydroxylamine (HA, hydroxylamine) and phosphodiphenol (Catechol) as a cleaning solution. Such products generally have the disadvantages of high pollution, high toxicity and expensive treatment costs. [0004] For this reason, various new cleaning solutions have been developed in the industry. For example, US Pat. No. 6,517,738 B...

AI Technical Summary

Problems solved by technology

[0006] The present invention solves the problem that the cleaning effect after dry etching in the prior art is not ideal and will damage the formed device structure

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