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Nitride semiconductor laser element

A technology of nitride semiconductors and laser components, applied in the direction of semiconductor lasers, laser components, optical waveguide semiconductor structures, etc.

Inactive Publication Date: 2011-02-02
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the conventional self-excited nitride semiconductor laser device has a serious problem in mass production.

Method used

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  • Nitride semiconductor laser element
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  • Nitride semiconductor laser element

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Embodiment Construction

[0021] Blue-violet semiconductor lasers are suitable as light sources for high-density optical discs. However, noise generated by the return light from the optical disc becomes a problem when the disc is reproduced. The inventors of the present application focused on a nitride semiconductor laser device having an embedded current constriction layer, and conducted continuous research in order to solve problems such as noise caused by returning light. As a result, it was found that a self-excited oscillation type nitride semiconductor laser device having stable characteristics can be realized by satisfying the condition represented by the formula (1).

[0022] 0.044<Δn / Γv<0.062···Formula (1)

[0023] Here, Δn is an effective refractive index difference, which is the difference between the effective refractive index n1 of the current constricting layer and the effective refractive index n2 of the opening formed in the current constricting layer. Γv is the light confinement rate...

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Abstract

A nitride semiconductor laser element comprising an active layer (106) which is composed of a nitride semiconductor and formed on a substrate, and a current-narrowing layer (109) formed on the active layer (106) and having an opening (109a) for selectively flowing a current to the active layer (106). When the effective refractive index difference between the opening (109a) and the current-narrowing layer (109) is represented by delta-n and the optical confinement rate in the vertical direction with respect to the laser light emitted from the active layer (106) and confined in the active layer (106) is represented by Gv, the following relation is satisfied: 0.044 < delta-n / Gv < 0.062.

Description

technical field [0001] The present invention relates to a self-excited oscillation type nitride semiconductor laser element having an embedded current narrowing structure. Background technique [0002] Currently, research and development on blue-violet semiconductor laser elements using nitride semiconductors is actively conducted for use in video recording and reproducing devices such as Blu-ray Disc (BLU-RAY DISC: registered trademark). In high-density optical disc systems such as Blu-ray discs, it is necessary to reduce the return light noise of the laser. As one of the measures for reducing the return light noise, there is a method of making the semiconductor laser element self-oscillate. [0003] In order to self-oscillate a semiconductor laser element, a method of providing a saturable absorbing layer in a light guiding layer or in a cladding layer or the like has been proposed. When the saturable absorbing layer is damaged by doping or dry etching, the carrier lifet...

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Application Information

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IPC IPC(8): H01S5/343H01S5/22
CPCH01S5/0014H01S5/0658H01S5/34333H01S5/2081H01S5/2009H01S5/3063H01S5/2206B82Y20/00
Inventor 小野泽和利田村聪之春日井秀纪
Owner PANASONIC CORP