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Method for making semiconductor device

A semiconductor, N-type semiconductor technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., and can solve problems such as low accuracy

Inactive Publication Date: 2009-01-07
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the above-mentioned conventional manufacturing method, the controllability of the amount of impurities is lower than that of the ion implantation method in precision

Method used

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  • Method for making semiconductor device
  • Method for making semiconductor device
  • Method for making semiconductor device

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Embodiment Construction

[0015] Referring to the accompanying drawings, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described in detail later. Figure 1 to Figure 4 A method of manufacturing a semiconductor device according to an embodiment of the present invention is shown.

[0016] figure 1 A schematic cross-sectional view is shown, in which an N-type drift layer 102 enriched in low impurities is formed on an N-type semiconductor substrate 101 enriched in high impurities, and trenches 103 are selectively formed in the N-type drift layer 102 enriched in low impurities , the gate insulating film 104 is formed. The trench 103 is formed by using a photolithography method and an anisotropic dry etching process. The gate insulating film 104 is formed by utilizing an in-furnace thermal oxidation process.

[0017] then, figure 2 A schematic cross-sectional view is shown in which, after depositing the first polysilicon film 105 with a thic...

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Abstract

There is provided a method of manufacturing a high quality P-channel trench MOSFET which stably operates. In the method of manufacturing a P-channel trench MOSFET having a P-type gate electrode, the process in which BF2 ions are implanted into a polycrystalline silicon film and thereafter the heat treatment is carried out is performed plural times to thereby form the gate electrode, and it is possible to provide the P-channel trench MOSFET of high quality which stably operates.

Description

technical field [0001] The present invention relates to a method of manufacturing a p-channel trench MOSFET of high quality with stable operation. Background technique [0002] In order to reduce the threshold voltage in a P-channel trench MOSFET, the conductivity type of the gate electrode needs to be made as P-type. The gate electrode is generally formed by doped chemical vapor deposition (CVD) in which impurities are simultaneously introduced during polysilicon film deposition (for example, see JP 2002-16080A (FIG. 5)). [0003] In the conventional manufacturing method described above, the controllability of the amount of impurities is lower in precision than in the ion implantation method. Therefore, the following problems arise. When the amount of impurities introduced is large, boron ions will reach the inside of the semiconductor substrate as P-type dopants in the subsequent heat treatment, so that the threshold voltage of the MOSFET will be shifted. When the amount...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/786H01L21/28H01L29/423H01L29/49H01L29/78
CPCH01L29/4925H01L29/66621H01L29/7835
Inventor 小山内润
Owner SII SEMICONDUCTOR CORP