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Band-gap reference voltage detection circuit

A technology of reference voltage and detection circuit, applied in the direction of measuring current/voltage, measuring device, adjusting electrical variables, etc., can solve the problems of false alarm, inability to guarantee VREF2, and inability to correctly provide the ready signal of the bandgap reference voltage.

Inactive Publication Date: 2011-03-30
SUZHOU HUAXIN MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The previous bandgap reference voltage detection circuit often uses the threshold voltage of one or several MOS transistors to form VREF2 to generate a voltage-ready signal, so this type of circuit is greatly affected by the threshold voltage of the MOS transistor and is relatively independent of VREF1, and There is no guarantee that VREF2 will always be less than VREF1, resulting in incorrect provision of the bandgap reference ready signal, which may generate false positives

Method used

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Embodiment Construction

[0011] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0012] like figure 1 Shown is a preferred embodiment of the present invention, the bandgap reference voltage detection circuit includes a PN junction diode mainly composed of transistor Q1 and transistor Q2, comparator A, comparator B, resistor R1, resistor R2, resistor R3 and resistor R4;

[0013] Wherein, the collector of the transistor Q1 is respectively connected to the anode of the comparator A, the cathode of the comparator B and one end of the resistor R1 through the third node N3, and the other end of the resistor R1 is respectively connected to one end of the resistor R2 and the VREF output of the comparator A The other end of the resistor R2 is respectively connected to the positive pole of the comparator B and one end of the resistor R3 via the first node N1, and the other end of the resistor R3 is connec...

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Abstract

The invention relates to a band-gap reference voltage detection circuit. The circuit comprises a first triode, a second triode, a first comparer, a second comparer, a first resistor, a second resistor, a third resistor and a fourth resistor, wherein the collector of the first triode is connected with the anode of the first comparer, the cathode of the second comparer and one end of the first resistor through a third node respectively; the other end of the first resistor is connected with one end of the second resistor and the voltage reference (VREF) output end of the first comparer respectively; the other end of the second resistor is connected with the anode of the second comparer and one end of the third resistor through a first node respectively; the other end of the third resistor is connected with the cathode of the first comparer and one end of the fourth resistor through a second node respectively; the other end of the fourth resistor is connected with the collector of the second triode; and bases and emitters of the first triode and the second triode are earthed. Compared with the prior art, the band-gap reference voltage detection circuit has the advantages that the difference value of VREF1 and VREF2 is a constant; and the VREF2 is ensured to be always less than the VREF1, and misinformation is prevented.

Description

technical field [0001] The invention specifically relates to a bandgap reference voltage detection circuit applied in the field of integrated circuits. Background technique [0002] In the field of integrated circuits, the bandgap reference circuit is a very important type of circuit. Its core content is that when the power supply voltage is above a certain voltage value, the voltage value of the bandgap reference does not change with the power supply voltage, but is almost the same as the power supply voltage value. independent, and almost independent of temperature within a certain temperature range. When the power supply voltage value is below the above-mentioned "certain voltage value", the voltage value of the bandgap reference tends to rise with the rise of the power supply voltage until it rises to the "certain voltage value", and then it hardly changes with the power supply voltage. The voltage value of the bandgap reference at time is denoted as VREF1. In order to...

Claims

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Application Information

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IPC IPC(8): G05F3/20G01R19/00
Inventor 石万文陈志明江石根杜坦谢卫国袁翔航晓伟黄君山
Owner SUZHOU HUAXIN MICROELECTRONICS
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