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Light-emitting element and a production method therefor

A technology for light-emitting devices and wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large and high driving voltage drop, unable to form ohmic contact interface, etc.

Inactive Publication Date: 2011-04-13
LG INNOTEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Therefore, when the first electrode layer is formed similarly to the lateral type LED in the vertical type LED, an excellent ohmic contact interface cannot be formed, and a high driving voltage drop occurs, so that a large amount of heat is emitted and the lifetime of the LED can be reduced.

Method used

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  • Light-emitting element and a production method therefor
  • Light-emitting element and a production method therefor
  • Light-emitting element and a production method therefor

Examples

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Embodiment Construction

[0018] In the description of the embodiments, it will be understood that when a layer (or film), region, pattern or structure is referred to as being on another substrate, another layer (or film), another region, another pad, or another When a pattern is "on" or "under", it can be "directly" or "indirectly" on another substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present. Such positions of layers have been described with reference to the drawings.

[0019] The thickness and size of each layer shown in the accompanying drawings may be exaggerated, omitted or schematically drawn for the purpose of convenience or clarity. In addition, the dimensions of the elements do not fully reflect the true size.

[0020] Figure 1 to Figure 5 is a cross-sectional view illustrating a light emitting device and a method of manufacturing the light emitting device according to the embodiment.

[0021] refer to figure 1 , a light emitting se...

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PUM

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Abstract

According to an embodiment of this invention, a light emitting element comprises: a supporting substrate; wafer-bonding layer on the supporting substrate; a current-spreading layer on the wafer-bonding layer; a second electrically conductive semiconductor layer on the current-spreading layer; an active layer on the second electrically conductive semiconductor layer; a first electrically conductive semiconductor layer on the active layer; a surface-modification layer on the first electrically conductive semiconductor layer; and a first electrode layer on the surface-modification layer.

Description

technical field [0001] The present invention relates to light emitting devices and methods of manufacturing light emitting devices. Background technique [0002] Recently, attention has been paid to light emitting diodes (LEDs) as light emitting devices. Since LEDs can convert electrical energy into light energy with high efficiency and have a lifespan of about 5 years or more, LEDs can significantly reduce energy consumption and repair and maintenance costs. In this regard, LEDs are attracting attention in the field of next-generation lighting. [0003] Such an LED includes a light emitting device semiconductor layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the active layer generates light according to current applied to the first and second conductive semiconductor layers. [0004] Meanwhile, an LED can be grown from a sapphire growth substrate, and the light-emitting semiconductor layers are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14H01L33/16H01L33/32
CPCH01L33/32H01L33/14H01L33/16H01L33/0066
Inventor 宋俊午
Owner LG INNOTEK CO LTD